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IRHMJ3250 の電気的特性と機能

IRHMJ3250のメーカーはInternational Rectifierです、この部品の機能は「(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHMJ3250
部品説明 (IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHMJ3250 Datasheet, IRHMJ3250 PDF,ピン配置, 機能
www.DataSheet4U.com
PD-96914
IRHMJ7250
RADIATION HARDENED
200V, N-CHANNEL
POWER MOSFET
RAD HardHEXFET® TECHNOLOGY
SURFACE MOUNT (TO-254AA Tabless)
Product Summary
Part Number Radiation Level
IRHMJ7250 100K Rads (Si)
IRHMJ3250 300K Rads (Si)
IRHMJ4250 600K Rads (Si)
IRHMJ8250 1000K Rads (Si)
RDS(on)
0.10
0.10
0.10
0.10
ID
26A
26A
26A
26A
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
TO-254AA Tabless
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
12/24/04

1 Page





IRHMJ3250 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHMJ7250
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600KRads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage Ã
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254AA)
200
2.0
4.0
100
-100
25
0.094
200 —
1.25 4.5
— 100
— -100
— 50
— 0.149
V
nA
µA
0.10 — 0.155
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =16A
VGS = 12V, ID =16A
VSD Diode Forward Voltage Ã
— 1.4 — 1.4 V
VGS = 0V, IS = 26A
1. Part numbers IRHMJ7250, IRHMJ3250 and IRHMJ4250
2. Part number IRHMJ8250
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28
Br 36.8
Energy
(MeV)
285
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43 190 180 170 125
39 100 100
100
50
200
150
100
50
0
0
-5 -10 -15 -20
VGS
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHMJ3250 電子部品, 半導体
IRHMJ7250
RadiationPCPohrseat-rIarrcatedriaisttioicns
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
www.irf.com

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部品番号部品説明メーカ
IRHMJ3250

(IRHMJx250) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

International Rectifier
International Rectifier


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