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PDF UPA2680T1E Data sheet ( Hoja de datos )
| Número de pieza | UPA2680T1E | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOSFET WITH SCHOTTKY BARRIER DIODE
μ PA2680T1E
N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DESCRIPTION
The μ PA2680T1E is a switching device, which can be driven
directly by a 4.5 V power source.
The μ PA2680T1E incorporates a MOSFET which features a
low on-state resistance and excellent switching characteristics
and a low forward voltage Schottky Barrier Diode, and is
suitable for applications such as DC/DC converter of portable
machine and so on.
FEATURES
• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET
RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A)
RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
• Low forward voltage Schottky Barrier Diode
VF = 0.36 V TYP. (IF = 1.0 A)
PIN CONNECTION (Top View)
654
123
1: Anode
2: Source/Cathode (Heat sink 2)
3: Gate
4: Drain (Heat sink 1)
5: Source/Cathode (Heat sink 2)
6: Anode
ORDERING INFORMATION
PART NUMBER
μ PA2680T1E
Marking: A2680
PACKAGE
6LD3x3MLP
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17661EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
1 page  
μ PA2680T1E
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
15
VGS = 10 V
4.5 V
10
2.5 V
5
Pulsed
0
0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
10
1
0.1
0.01
TA = 125°C
75°C
25°C
−25°C
0.001
0.0001
0
VDS = 10 V
Pulsed
0.5 1 1.5 2
VGS - Gate to Source Voltage - V
2.5
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
VDS = VGS
ID = 0.25 mA
1.3
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.5
VDS = 10 V
1.3 ID = 1 mA
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
TA = −25°C
25°C
75°C
125°C
1
0.1
0.01
VDS = 10 V
Pulsed
0.1 1
ID - Drain Current - A
10
80
60
40
20
Pulsed
0
0.01
VGS = 2.5 V
4.5 V
10 V
0.1 1
ID - Drain Current - A
10
Data Sheet G17661EJ2V0DS
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet UPA2680T1E.PDF ] | |
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