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Datasheet GJ80LS02 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GJ80LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :
GJ80LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 8m 75A
Description
The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance |  GTM | mosfet |
GJ8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GJ8050 | NPN EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
GJ8050
Description Features
NPN EPITAXIAL TRANSISTOR
The GJ8050 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8550
Package Dimensions
GTM transistor | | |
| 2 | GJ80LS02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :
GJ80LS02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 8m 75A
Description
The GJ80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance GTM mosfet | | |
| 3 | GJ80N03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/22 REVISED DATE :
GJ80N03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 8m 80A
The GJ80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 4 | GJ8550 | PNP EPITAXIAL TRANSISTOR
CORPORATION
GJ8550
Description Features
PNP EPITAXIAL TRANSISTOR
ISSUED DATE :2005/05/06 REVISED DATE :
The GJ8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to GJ8050
Package GTM transistor | | |
| 5 | GJ85L02 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/28 REVISED DATE :
GJ85L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 6m 85A
The GJ85L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec GTM mosfet | | |
| 6 | GJ85T03 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2005/11/24 REVISED DATE :
GJ85T 03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 6m 75A
Description
The GJ85T03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance GTM mosfet | | |
| 7 | GJ882 | NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2002/12/13 REVISED DATE :2005/08/10B
GJ882
Description
NP N EP ITAX I AL PL ANAR T RANSI STOR
The GJ882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and relay driver.
Package Dimensions TO-252
REF. A B C D E F S
Mil GTM transistor | |
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