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IRLZ44NLPBF の電気的特性と機能

IRLZ44NLPBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRLZ44NLPBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRLZ44NLPBF Datasheet, IRLZ44NLPBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95156
IRLZ44NS/LPbF
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRLZ44NS)
l Low-profile through-hole (IRLZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRLZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.022
ID = 47A
S
D 2 Pak
TO-262
Max.
47
33
160
3.8
110
0.71
±16
210
25
11
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
4/21/04

1 Page





IRLZ44NLPBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
IRLZ44NS/LPbF
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
10
1
0.1
2.5V
20µs PULSE WIDTH
TJ = 25°C
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10 2.5V
20µs PULSE WIDTH
1
TJ = 175°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25°C
100
TJ = 175°C
10
V DS= 25V
1
20µs PULSE WIDTH
A
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0 ID = 41A
2.5
2.0
1.5
1.0
0.5
0.0 VGS = 10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRLZ44NLPBF 電子部品, 半導体
IRLZ44NS/LPbF
VDS
RG
5.0 V
tp
L
D.U.T.
IAS
0.01
+
- VDD
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
500 ID
TOP
10A
17A
400 BOTTOM 25A
300
200
100
0 VDD = 25V
25 50
75
A
100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
IRLZ44NLPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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