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IRLL024NQのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRLL024NQ |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLL024NQダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
PD-94152
AUTOMOTIVE MOSFET
IRLL024NQ
Typical Applications
q Electronic Fuel Injection
HEXFET® Power MOSFET
q Active Suspension
q Power Doors, Windows & Seats
q Cruise Control
q Air Bags
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
D
VDSS = 55V
RDS(on) = 0.065Ω
G
q 175°C Operating Temperature
q Repetitive Avalanche Allowed up to Tjmax
q Dynamic dv/dt Rating
ID = 3.1A
S
q Automotive [Q101] Qualified
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET
in a SOT-223 package utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of this Automotive
qualified HEXFET Power MOSFET are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SOT-223 package is designed for surface mount and the enlarged tab
provides improved thermal characteristics making it ideal in a variety of power
applications. Power dissipation of 1.0W is possible in a typical surface mount
application. Available in Tape & Reel.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current Q
Power DissipationS
Linear Derating Factor
3.1
2.6
12
1.3
8.3
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche EnergyT
Avalanche CurrentQ
Repetitive Avalanche EnergyV
Peak Diode Recovery dv/dt U
±16
87
See Fig.16c, 16d, 19, 20
9.9
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
-55 to + 175
Parameter
Typ.
Max.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Units
A
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
03/16/01
1 Page 100
TOP
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
1
2.7V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
IRFLL024NQ
100
TOP
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
10
1
2.7V
0.1
0.1
20µs PULSE WIDTH
TJ = 175 °C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
1.0
VDS = 15V
20µs PULSE WIDTH
3.0 5.0 7.0 9.0 11.0 13.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig 3. Typical Transfer Characteristics
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2.5 ID = 3.1A
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRLL024NQ
0.10
0.09
0.08
ID = 3.1A
0.07
0.06
0.05
3.0
5.0 7.0 9.0 11.0 13.0
-VGS, Gate -to -Source Voltage (V)
15.0
Fig 12. Typical On-Resistance Vs. Gate
Voltage
0.400
0.350
0.300
0.250
0.200
0.150
VGS = 10V
0.100
0.050
0
10 20 30 40 50 60 70 80
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs. Drain
Current
2.0
1.8
1.6 ID = 250µA
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 14. Typical Threshold Voltage Vs.
Junction Temperature
6
60
50
40
30
20
10
0
1.00
10.00
100.00
Time (sec)
1000.00
Fig 15. Typical Power Vs. Time
www.irf.com
6 Page | |||
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