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IRHY54130CM の電気的特性と機能

IRHY54130CMのメーカーはInternational Rectifierです、この部品の機能は「(IRHY5x130CM) RADIATION HARDENED POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHY54130CM
部品説明 (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHY54130CM Datasheet, IRHY54130CM PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 93826D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57130CM 100K Rads (Si) 0.07
IRHY53130CM 300K Rads (Si) 0.07
IRHY54130CM 500K Rads (Si) 0.07
IRHY58130CM1000K Rads (Si) 0.085
IRHY57130CM
JANSR2N7484T3
100V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
™
ID
18A*
18A*
18A*
18A*
QPL Part Number
JANSR2N7484T3
JANSF2N7484T3
JANSG2N7484T3
JANSH2N7484T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
14 A
72
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
87
mJ
IAR Avalanche Current À
18 A
EAR
Repetitive Avalanche Energy À
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt Â
1.4 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
oC
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
4/26/06

1 Page





IRHY54130CM pdf, ピン配列
Radiation Characteristics
IRHY57130CM, JANSR2N7484T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100
VGS(th) Gate Threshold Voltage
2.0 4.0
100 —
1.5 4.0
V
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source Ã
— 10 — 25 µA
— 0.074 — 0.09
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source Ã
— 0.07 — 0.085
On-State Resistance (TO-257AA)
VSD Diode Forward Voltage Ã
— 1.2 — 1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID =14A
VGS = 12V, ID =14A
VGS = 0V, IS = 18A
1. Part numbers IRHY57130CM (JANSR2N7484T3), IRHY53130CM (JANSF2N7484T3) and IRHY54130CM (JANSG2N7484T3)
2. Part number IRHY58130CM (JANSH2N7484T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2))
Br 36.7
I 59.4
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 100
100
32.5 100
100
28.4 100
100
VDS (V)
@VGS=-10V
100
100
80
@VGS=-15V
100
35
25
@VGS=-20V
100
25
120
100
80
60
40
20
0
0 -5 -8 -10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHY54130CM 電子部品, 半導体
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
25
LIMITED BY PACKAGE
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
t1, Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHY54130CM

(IRHY5x130CM) RADIATION HARDENED POWER MOSFET

International Rectifier
International Rectifier


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