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IRHLUB770Z4 の電気的特性と機能

IRHLUB770Z4のメーカーはInternational Rectifierです、この部品の機能は「(IRHLUB7x0Z4) POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLUB770Z4
部品説明 (IRHLUB7x0Z4) POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHLUB770Z4 Datasheet, IRHLUB770Z4 PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 95813
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
IRHLUB770Z4
60V, N-CHANNEL
TECHNOLOGY
c
Product Summary
Part Number Radiation Level RDS(on)
IRHLUB770Z4 100K Rads (Si) 0.55
IRHLUB730Z4 300K Rads (Si) 0.55
IRHLUB740Z4 600K Rads (Si) 0.55
IRHLUB780Z4 1000K Rads (Si) 0.55
ID
0.8A
0.8A
0.8A
0.8A
UB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
0.8
0.5
3.2
0.6
0.0045
±10
2.0
0.8
0.06
4.0
-55 to 150
300 (for 5s)
43 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
mg
For footnotes refer to the last page
www.irf.com
1
02/02/04

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IRHLUB770Z4 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHLUB770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
Up to 600K Rads(Si)1 1000K Rads(Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 —
VGS(th) Gate Threshold Voltage
1.0 2.0
IGSS
Gate-to-Source Leakage Forward — 100
IGSS
Gate-to-Source Leakage Reverse — -100
IDSS
Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
— 1.0
— 0.55
On-State Resistance (TO-39)
60 — V
1.0 2.0
— 100 nA
— -100
— 10 µA
— 0.55
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10 V
VDS= 48V, VGS =0V
VGS = 4.5V, ID = 0.5A
RDS(on)
Static Drain-to-Source
On-State Resistance (UB)
— 0.55 — 0.55
VGS = 4.5V, ID = 0.5A
VSD Diode Forward Voltage
— 1.2 —
1.2 V
VGS = 0V, IS = 0.8A
1. Part numbers IRHLUB770Z4, IRHLUB730Z4, IRHLUB740Z4
2. Part number IRHLUB780Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V -8V -10V
Br 37.3
285 36.8 60 60 60 60 60 35 30 20
I 59.9
345 32.7 60
60
60
60 60 20 15
-
Au 82.3
357 28.5 60 60 60 60
-
-
-
-
70
60
50
40
30
20
10
0
0 -2 -4 -6 -8 -10 -12
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHLUB770Z4 電子部品, 半導体
IRHLUB770Z4
Pre-Irradiation
1.0
0.8
0.6
0.4
0.2
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100 D = 0.50
0.20
0.10
0.05
10
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHLUB770Z4

(IRHLUB7x0Z4) POWER MOSFET

International Rectifier
International Rectifier
IRHLUB770Z4

(IRHLUB7x0Z4) POWER MOSFET

International Rectifier
International Rectifier


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