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IRHLNA797064 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHLNA797064
部品説明 (IRHLNA79x064) POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHLNA797064 Datasheet, IRHLNA797064 PDF,ピン配置, 機能
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PD-97174A
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number Radiation Level
IRHLNA797064 100K Rads (Si)
IRHLNA793064 300K Rads (Si)
RDS(on)
0.015
0.015
ID
-56A*
-56A*
2N7622U2
IRHLNA797064
60V, P-CHANNEL
TECHNOLOGY
™
SMD-2
Internation
MOSFETs
al
pr
Rectifier’s R
ovide simple
7sToMluLtoiognic
Level Power
to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @VGS = -4.5V,TC = 25°C Continuous Drain Current
ID @VGS = -4.5V,TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
Pre-Irradiation
Units
-56*
-56* A
-224
250 W
2.0 W/°C
±10 V
1060
mJ
-56 A
25 mJ
-3.7 V/ns
-55 to 150
°C
300 (for 5s)
3.3 (Typical)
g
1
06/11/07

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