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IRHLG770Z4 の電気的特性と機能

IRHLG770Z4のメーカーはInternational Rectifierです、この部品の機能は「(IRHLG7x0Z4) POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHLG770Z4
部品説明 (IRHLG7x0Z4) POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHLG770Z4 Datasheet, IRHLG770Z4 PDF,ピン配置, 機能
www.DataSheet4U.com
PD-95865
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG770Z4 100K Rads (Si)
IRHLG730Z4 300K Rads (Si)
RDS(on)
0.6
0.6
ID
1.07A
1.07A
IRHLG770Z4
60V, Quad N-CHANNEL
TECHNOLOGY
™
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n Complimentary P-Channel Available -
IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.07
0.67
4.28
1.0
0.01
±10
13
1.07
0.1
7.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/28/06

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IRHLG770Z4 pdf, ピン配列
PRraed-IirartaiodniaCtiohnaracteristics
IRHLGG777700ZZ44
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036)
Up to 300K Rads (Si)1
Min Max
60 —
1.0 2.0
— 100
— -100
— 1.0
— 0.5
— 0.6
Units
V
nA
µA
Test Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
VGS = 4.5V, ID = 0.67A
VGS = 4.5V, ID = 0.67A
VSD Diode Forward Voltage „
— 1.2
V
VGS = 0V, ID = 1.07A
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V -2V -4V -5V -6V -7V -8V -10V
Br 37
I 60
Au 84
305 39 60 60 60 60 60 35 30 20
370 34 60 60 60 60 60 20 15 -
390 30 60 60 60 60
-
-
-
-
70
60
50
40
30
20
10
0
0 -2 -4 -6 -8 -10 -12
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHLG770Z4 電子部品, 半導体
IRHLG770Z4
Pre-Irradiation
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10ms
10
VDS , Drain-to-Source Voltage (V)
100
Fig 10. Maximum Safe Operating Area
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
SINGLE PULSE
( THERMAL RESPONSE )
P DM
t1
t2
0.1
0.01
1E-005
0.0001
0.001
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRHLG770Z4

(IRHLG7x0Z4) POWER MOSFET

International Rectifier
International Rectifier


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