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PDF IRHLG730Z4 Data sheet ( Hoja de datos )
| Número de pieza | IRHLG730Z4 | |
| Descripción | (IRHLG7x0Z4) POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-95865
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level
IRHLG770Z4 100K Rads (Si)
IRHLG730Z4 300K Rads (Si)
RDS(on)
0.6Ω
0.6Ω
ID
1.07A
1.07A
IRHLG770Z4
60V, Quad N-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
n Complimentary P-Channel Available -
IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.07
0.67
4.28
1.0
0.01
±10
13
1.07
0.1
7.0
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/28/06
1 page  
Pre-Irradiation
IRHLG770Z4
80
ID = 1.0mA
70
60
50
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 5. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 6. Typical Threshold Voltage Vs
Temperature
280 VGS = 0V, f = 1 MHz
240
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
200
Ciss
160
Coss
120
80
40
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
12
ID = 1.07A VDS = 48V
10 VDS = 30V
VDS = 12V
8
6
4
2 FOR TEST CIRCUIT
SEE FIGURE 15
0
0 0.5 1 1.5 2 2.5 3 3.5 4
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRHLG730Z4.PDF ] | |
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