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PDF IRHLF73110 Data sheet ( Hoja de datos )
| Número de pieza | IRHLF73110 | |
| Descripción | (IRHLF77110 / IRHLF73110) POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-97062
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF77110
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHLF77110 100K Rads (Si)
IRHLF73110 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID
6.0A
6.0A
T0-39
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings
ID @ VGS = 4.5V, TC=25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Pre-Irradiation
Units
6.0
3.7 A
24
23 W
0.18
W/°C
±10 V
43 mJ
6.0 A
2.3 mJ
4.9
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/27/06
1 page  
Pre-Irradiation
IRHLF77110
130
ID = 1.0mA
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
Fig 5. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
2.5
2.0
1.5
1.0 ID = 50µA
ID = 250µA
0.5 ID = 1.0mA
ID = 150mA
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 6. Typical Threshold Voltage Vs
Temperature
1600
1400
1200
VGS = 0V, f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
800
Ciss
600 Coss
400
200 Crss
0
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance Vs.
Drain-to-Source Voltage
www.irf.com
12
ID = 6.0A
10
8
VDS = 80V
VDS = 50V
VDS = 20V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 15
0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge Vs.
Gate-to-Source Voltage
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRHLF73110.PDF ] | |
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