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IRHLF77110 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHLF77110
部品説明 (IRHLF77110 / IRHLF73110) POWER MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHLF77110 Datasheet, IRHLF77110 PDF,ピン配置, 機能
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PD-97062
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF77110
100V, N-CHANNEL
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHLF77110 100K Rads (Si)
IRHLF73110 300K Rads (Si)
RDS(on)
0.30
0.30
ID
6.0A
6.0A
T0-39
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Absolute Maximum Ratings
ID @ VGS = 4.5V, TC=25°C
ID @ VGS = 4.5V, TC=100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Pre-Irradiation
Units
6.0
3.7 A
24
23 W
0.18
W/°C
±10 V
43 mJ
6.0 A
2.3 mJ
4.9
-55 to 150
V/ns
°C
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/27/06

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IRHLF77110

(IRHLF77110 / IRHLF73110) POWER MOSFET

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