|
|
PDF IRHLF640Z4 Data sheet ( Hoja de datos )
| Número de pieza | IRHLF640Z4 | |
| Descripción | (IRHLF6x0Z4) POWER MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRHLF640Z4 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 94695
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
IRHLF670Z4
60V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHLF670Z4 100K Rads (Si) 0.5Ω
IRHLF630Z4 300K Rads (Si) 0.5Ω
IRHLF640Z4 600K Rads (Si) 0.5Ω
IRHLF680Z4 1000K Rads (Si) 0.5Ω
ID
1.6A*
1.6A*
1.6A*
1.6A*
T0-39
International Rectifier’s R6TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radia-
tion. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as cur-
rent boost low signal source in PWM, voltage com-
parator and operational amplifiers.
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary P-Channel Available -
IRHLF6970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
1.6*
1.0* A
6.4
5.0 W
0.04
±10
W/°C
V
9.0 mJ
1.6 A
0.5 mJ
3.5
-55 to 150
V/ns
oC
300 (0.063in/1.6mm from case for 10s)
0.98 (Typical)
g
* Derated to match the Complimentary P-Channel Logic Level Power Mosfet -IRHLF6970Z4
For footnotes refer to the last page
www.irf.com
1
07/07/03
1 page  
Pre-Irradiation
IRHLF670Z4
250
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
200 Coss = Cds + Cgd
Ciss
150
Coss
100
50
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12 ID = 1.6A
10
VDS = 48V
VDS = 30V
VDS = 12V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
012345
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10 10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100µs
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHLF640Z4.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRHLF640Z4 | (IRHLF6x0Z4) POWER MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |