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PDF IRF6668TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6668TRPBF | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
PD - 97232A
IRF6668PbF
IRF6668TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
80V max ±20V max
12mΩ@ 10V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
22nC 7.8nC 1.6nC 40nC 12nC 4.0V
MZ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MZ
Description
The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V
ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated
isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables
high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
80 V
±20
55
44 A
170
24 mJ
23 A
60 12.0
50
ID = 12A
10.0 ID= 12A
VDS= 64V
40 8.0 VDS= 40V
30
TJ = 125°C
20
6.0
4.0
10
0
4
TJ = 25°C
6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.088mH, RG = 25Ω, IAS = 23A.
1
08/28/06
1 page  
1000
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
100
80
60
IRF6668PbF
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
10
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
5.0
4.0
ID = 100µA
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
ID TOP
4.3A
7.6A
BOTTOM 23A
40
20
www.irf.com
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6668TRPBF.PDF ] | |
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