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IRF6668 の電気的特性と機能

IRF6668のメーカーはInternational Rectifierです、この部品の機能は「DirectFet Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6668
部品説明 DirectFet Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6668 Datasheet, IRF6668 PDF,ピン配置, 機能
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PD - 97044A
IRF6668
DirectFET™ Power MOSFET ‚
l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
Qg tot Qgd
80V max ±20V max 12m@ 10V 22nC 7.8nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP
MZ MN
DirectFET™
ISOMETRIC
Description
The IRF6668 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V ETSI
input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DC-
DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance
isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
IS @ TC = 25°C
IS @ TC = 70°C
ISM
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fContinuous Source Current (Body Diode)
fContinuous Source Current (Body Diode)
ePulsed Source Current (Body Diode)
80 V
±20
55
44
170 A
81
52
170
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Repetitive rating; pulse width limited by max. junction temperature.
„ TC measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
11/4/05

1 Page





IRF6668 pdf, ピン配列
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
hPower Dissipation
hPower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hjJunction-to-Ambient
ijJunction-to-Ambient
fjJunction-to-Case
Junction-to-PCB Mounted
10
IRF6668
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
–––
1.0
Max.
45
–––
1.4
–––
Units
W
°C
Units
°C/W
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
C
i=
C
iτ=iRi/iR
i
R 2R 2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτC 0.3173 0.000048
τ3τ3 0.5283 0.000336
0.5536 0.001469
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 1. Maximum Effective Transient Thermal Impedance, Junction-to-Case 
Notes:
† Surface mounted on 1 in. square Cu, steady state (still air).
‡ Used double sided cooling, mounted on 1 in. square Cu board
PCB with small clip heatsink (still air).
ˆ Rθ is measured at TJ of approximately 90°C.
Note †
www.irf.com
Note †
Note ‡
3


3Pages


IRF6668 電子部品, 半導体
IRF6668
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 14b. Gate Charge Waveform
15V
VDS
L
DRIVER
RG
V2G0SV
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 15a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 15b. Unclamped Inductive Waveforms
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 16a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 16b. Switching Time Waveforms
www.irf.com

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