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Datasheet SHF1106 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SHF1106 | Hyper Fast Rectifier
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com
SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS 1 AMP 400 - 900 V Hyper Fast Rectifier
Axial Lead Diode SMS
DESIGNER’S D |  SSDI | rectifier |
| 2 | SHF1106SMS | Hyper Fast Rectifier
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com
SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS 1 AMP 400 - 900 V Hyper Fast Rectifier
Axial Lead Diode SMS
DESIGNER’S D | SSDI | rectifier |
SHF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | SHF-0186 | DC-12 GHz/ 0.5 Watt AlGaAs/GaAs HFET Preliminary Preliminary
Product Description
Stanford Microdevices’ SHF-0186 is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and |  ETC |  |
| 2 | SHF-0186K | DC-3 GHz/ 0.5 Watt AlGaAs/GaAs HFET Preliminary Preliminary
Product Description
Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency an | ETC | |
| 3 | SHF-0189 | GaAs HFET Product Description
Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearit |  Sirenza Microdevices | |
| 4 | SHF-0189Z | GaAs HFET Product Description
Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearit | Sirenza Microdevices | |
| 5 | SHF-0289 | DC-3 GHz/ 1.0 Watt GaAs HFET Product Description
Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added efficiency and improved linearit | ETC | |
| 6 | SHF-0289Z | GaAs HFET Product Description
Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearit | Sirenza Microdevices | |
| 7 | SHF-0589 | 0.05-3 GHz/ 2 Watt GaAs HFET Product Description
Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved lineari | ETC | |
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