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PDF IRGP20B120U-EP Data sheet ( Hoja de datos )
| Número de pieza | IRGP20B120U-EP | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast Non Punch Through (NPT)
Technology
10 µs Short Circuit capability
Square RBSOA
Positive VCE(on) Temperature Coefficient
Extended lead TO-247 package
Lead-Free
Benefits
Benchmark efficiency above 20KHz
Optimized for Welding, UPS, and Induction Heating
applications
Rugged with UltraFast performance
Low EMI
Significantly Less Snubber required
Excellent Current sharing in Parallel operation
Longer leads for easier mounting
PD- 95897
IRGP20B120U-EP
C
G
E
n-channel
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.05V
VGE = 15V, IC = 20A, 25°C
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EAS @ TC =25°C
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Gate-to-Emitter Voltage
Avalanche Energy, single pulse
IC = 25A, VCC = 50V, RGE = 25ohm
L = 200µH (Fig. CT.6)
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
TO-247AD
Max.
1200
40
20
120
120
± 20
65
300
120
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Min.
Typ.
0.24
Max.
0.42
40
Wt
ZθJC
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Weight
Transient Thermal Impedance Junction-to-Case (Fig.18)
6 (0.21)
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
09/14/04
1 page  
www.DataSheet4U.com
IRGP20B120U-EP
Fig.98 - Typical V CE vs V GE
Tj= -40°C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6
8 10 12 14 16 18 20
V GE (V)
Fig.1101 - Typical V CE vs V GE
Tj= 125°C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6
8
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10 12 14 16 18 20
V GE (V)
Fig.190 - Typical V CE vs V GE
Tj= 25°C
20
18
16
14
12
10 I CE =10A
8 I CE =20A
I CE =40A
6
4
2
0
6
8 10 12 14 16 18 20
V GE (V)
Fig.1121 - Typ. Transfer Characteristics
V CE =20V; tp=20µ s
250
225
Tj=25°C
Tj=125°C
200
175
150
125
100
75
50
25 Tj=125°C
0
0
4
Tj=25°C
8 12
V GE (V)
16
20
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGP20B120U-EP.PDF ] | |
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