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IRGIB7B60KDPBF の電気的特性と機能

IRGIB7B60KDPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGIB7B60KDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGIB7B60KDPBF Datasheet, IRGIB7B60KDPBF PDF,ピン配置, 機能
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PD - 95195
IRGIB7B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
G
E
n-channel
VCES = 600V
IC = 8.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current Q
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t=1 min.
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
600
12
8.0
24
24
9.0
6.0
18
2500
±20
39
20
-55 to +175
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
10 lbf·in (1.1 N·m)
Min.
Typ.
Max.
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
––– ––– 3.8
––– ––– 6.0 °C/W
––– 0.50 –––
––– ––– 62
––– 2.0 ––– g
www.irf.com
1
04/27/04

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IRGIB7B60KDPBF pdf, ピン配列
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IRGIB7B60KDPbF
"


&
$
"

  " $ &    " $ &
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
100
10
1
0.1
0.01
1
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100 µs
1ms
10ms
DC
10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C; TJ 150°C





 
VCE (V)
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
3


3Pages


IRGIB7B60KDPBF 電子部品, 半導体
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IRGIB7B60KDPbF
600
500
400
300 EOFF
200
EON
100
0
0 5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V,
RG= 50; VGE= 15V
1000
tdOFF
100
tF
tdON
10
0
tR
5 10
IC (A)
15
20
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V
RG= 50; VGE= 15V
700
600 EON
500
EOFF
400
300
200
100
0
0
100 200 300 400 500
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
6
10000
1000
tdOFF
100
tF
tdON
10
0
tR
100 200 300 400 500
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
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部品番号部品説明メーカ
IRGIB7B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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