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PDF IRGSL6B60KD Data sheet ( Hoja de datos )
| Número de pieza | IRGSL6B60KD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• TO-220 is available in PbF as a Lead-Free
C
G
E
n-channel
PD - 95229
IRGB6B60KDPbF
IRGS6B60KD
IRGSL6B60KD
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD
Max.
600
13
7.0
26
26
13
7.0
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
09/16/04
1 page  
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IRGB6B60KDPbF/IRGS/SL6B60KD
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
40
35 TJ = 25°C
TJ = 150°C
30
25
20
15
10 TJ = 150°C
5
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
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IRGB6B60KDPbF/IRGS/SL6B60KD
450 9
400 8
350
90% ICE
300
7
6
250
tf
200
5
4
150
5% VCE
3
100 2
5% ICE
50 1
0
-50
-0.20
Eof f Loss
0.30
time(µs)
0.80
0
-1
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
500 25
400 20
300 15
TEST CURRENT
200 10
90% test current
100
tr
0
10% test current
5% VCE
5
0
-100
16.00
Eon Loss
16.10 16.20 16.30
time (µs)
-5
16.40
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
50 8
0
-50
-100
QRR
tRR
6
4
2
-150
0
-200
-250
-300
Peak
IRR
10%
Peak
IRR
-2
-4
-6
-350
-8
-400
-10
-450
-0.06
0.04
0.14
-12
0.24
time (µS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
500 50
400 40
VCE
300 ICE 30
200 20
100 10
0
-5.00
0.00
5.00
0
10.00 15.00
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
11
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| PDF Descargar | [ Datasheet IRGSL6B60KD.PDF ] | |
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