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What is IRGSL6B60KD?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "INSULATED GATE BIPOLAR TRANSISTOR".


IRGSL6B60KD Datasheet PDF - International Rectifier

Part Number IRGSL6B60KD
Description INSULATED GATE BIPOLAR TRANSISTOR
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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Total 15 Pages



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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94381E
IRGB6B60KD
IRGS6B60KD
IRGSL6B60KD
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current„
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
IRGB6B60KD
D2Pak
TO-262
IRGS6B60KD IRGSL6B60KD
Max.
600
13
7.0
26
26
13
7.0
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
1.4
4.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04

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IRGSL6B60KD equivalent
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20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRG/B/S/SL6B60KD
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 3.0A
ICE = 5.0A
ICE = 10A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
40
35 TJ = 25°C
TJ = 150°C
30
25
20
15
10 TJ = 150°C
5
0
05
TJ = 25°C
10
VGE (V)
15
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRGSL6B60KD electronic component.


Information Total 15 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IRGSL6B60KThe function is INSULATED GATE BIPOLAR TRANSISTOR. International RectifierInternational Rectifier
IRGSL6B60KDThe function is INSULATED GATE BIPOLAR TRANSISTOR. International RectifierInternational Rectifier
IRGSL6B60KDThe function is INSULATED GATE BIPOLAR TRANSISTOR. International RectifierInternational Rectifier

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