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IRGB6B60K PDF Data sheet ( 特性 )

部品番号 IRGB6B60K
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 13 pages
		

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IRGB6B60K Datasheet, IRGB6B60K PDF,ピン配置, 機能
www.DataSheet4U.com
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
C
G
E
n-channel
PD - 94575A
IRGB6B60K
IRGS6B60K
IRGSL6B60K
VCES = 600V
IC = 7.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current 
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
TO-220AB
IRGB6B60K
D2Pak
IRGS6B60K
TO-262
IRGSL6B60K
Max.
600
13
7.0
26
26
± 20
90
36
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount‚
Junction-to-Ambient (PCB Mount, steady state)ƒ
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
°C/W
g
1
8/18/04

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