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IRG4PC30KPBFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG4PC30KPBF |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4PC30KPBFダウンロード(pdfファイル)リンクがあります。 Total 8 pages
www.DataSheet4U.com
PD - 94921
IRG4PC30KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Lead-Free
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGPC30K and IRGPC30M
devices
Absolute Maximum Ratings
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
TO-247AC
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
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Max.
600
28
16
58
58
10
±20
260
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Units
V
A
µs
V
mJ
W
°C
Typ.
0.24
6 (0.21)
Max.
1.2
40
Units
°C/W
g (oz)
1
12/30/03
1 Page www.DataSheet4U.com
IRG4PC30KPbF
40
35
30
25
Square wave:
20 60% of rated
voltage
15
I
10
Ideal diodes
5
0
0.1
For both:
Duty cycle: 50%
TTJsin=k12=59°C0°C
Gate drive as specified
Power Dissipation = 24W
Triangular wave:
I
Clamp voltage:
80% of rated
1 10
f, Frequency (kHz)
A
100
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
1
0.1
1
VGE = 15V
20µs PULSE WIDTH
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150 oC
10
TJ = 25 oC
1
0.1
5
VCC = 50V
5µs PULSE WIDTH
10 15
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages www.DataSheet4U.com
IRG4PC30KPbF
4.0 RG = 2O3hΩm
T J = 150° C
VCC = 480V
3.2 VGE = 15V
2.4
1.6
0.8
0.0
0
8 16 24 32
I C , Collector-to-emitter Current (A)
40
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
VGE
TJ
=
=
20V
125 oC
10
SAFE OPERATING AREA
1
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRG4PC30KPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |