|
|
IRG4BC40WSのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | IRG4BC40WS |
| |
部品説明 | INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRG4BC40WSダウンロード(pdfファイル)リンクがあります。 Total 10 pages
www.DataSheet4U.com
PD - 95861
INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC40WS
IRG4BC40WL
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
Benefits
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.05V
@VGE = 15V, IC = 20A
D2Pak
TO-262
IRG4BC40WS IRG4BC40WL
Max.
600
40
20
160
160
± 20
160
160
65
-55 to + 150
300 (0.063 in. (1.6mm) from case )
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted steady-state)
Weight
www.irf.com
Typ.
0.5
2.0 (0.07)
Max.
0.77
40
Units
°C/W
g (oz)
1
4/19/04
1 Page www.DataSheet4U.com
50
40
30
Square wave:
60% of rated
voltage
20
10
0
0.1
Ideal diodes
1
IRG4BC40WS/L
For both:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 28W
Triangular wave:
Clamp voltage:
80% of rated
10
f, Frequency (kHz)
100
A
1000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
TJ = 25 °C
100
TJ = 150 °C
10
VGE = 15V
80µs PULSE WIDTH
1
1.0 2.0 3.0 4.0 5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
www.irf.com
1000
100
TJ = 150 °C
10 TJ = 25 °C
VCC = 50V
5µs PULSE WIDTH
1
5 7 9 11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
3Pages www.DataSheet4U.com
IRG4BC40WS/L
2.0 RG =1100ΩOhm
T J = 150° C
VCC = 480V
VGE = 15V
1.5
1.0
0.5
0.0
5
15 25 35 45
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
1000
VGE = 20V
T J = 125 oC
100
SAFE OPERATING AREA
10
1 10 100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
6 www.irf.com
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ IRG4BC40WS データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRG4BC40W | HEXFET Power MOSFET | International Rectifier |
IRG4BC40WL | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
IRG4BC40WLPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
IRG4BC40WS | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |