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PDF BF1210 Data sheet ( Hoja de datos )
| Número de pieza | BF1210 | |
| Descripción | Dual N-channel dual gate MOSFET | |
| Fabricantes | NXP Semiconductors | |
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BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006
Product data sheet
1. Product profile
CAUTION
1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
Table 8. Dynamic characteristics for amplifier A …continued
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS(A) = 5 V; ID(A) = 19 mA.
Symbol Parameter
Conditions
Gtr transducer power gain
NF noise figure
Xmod cross modulation
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
input level for k = 1 %; fw = 50 MHz;
funw = 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[1] Calculated from S-parameters.
[2] Measured in Figure 32 test circuit.
Min Typ Max Unit
[1]
31
27
22
-
-
-
[2]
35 39 dB
31 35 dB
26 30 dB
3-
dB
0.9 1.5 dB
1.2 1.9 dB
90 -
-
- 90 -
- 99 -
100 105 -
dBµV
dBµV
dBµV
dBµV
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9. Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f (MHz) s11 s21 s12 s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
40 0.9861
−3.2 3.14
176.75 0.00054
87.97 0.9934
100 0.9883
−7.84 3.14
171.53 0.00104
87.69 0.9925
200 0.9844
−15.7 3.12
163.1 0.00205
80.77 0.9918
300 0.9761
−23.52 3.08
154.65 0.00295
76.33 0.9904
400 0.9635
−31.26 3.03
146.33 0.00375
72.34 0.9888
500 0.9486
−38.78 2.97
138.15 0.00437
67.97 0.9870
600 0.9305
−46.2 2.90
130.12 0.00483
64.86 0.9847
700 0.9105
−53.33 2.81
122.26 0.0051
62.13 0.9832
800 0.8911
−60.2 2.73
114.65 0.0052
59.88 0.9817
900 0.8723
−67.03 2.65
107.2 0.00515
58.8 0.9796
1000 0.8521
−73.74 2.56
99.78 0.00498
58.03 0.9785
Angle
(deg)
−1.19
−2.85
−5.69
−8.51
−11.33
−14.13
−16.87
−19.61
−22.35
−25.03
−27.08
8.2 Noise data for amplifier A
Table 10. Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA, Tamb = 25 °C; typical values.
f (MHz)
NFmin (dB)
Γopt
(ratio)
400 0.9
0.749
800 1.2
0.688
(deg)
23.7
48.65
rn (ratio)
0.667
0.583
8.3 Dynamic characteristics for amplifier B
Table 11. Dynamic characteristics for amplifier B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS(B) = 5 V; ID(B) = 13 mA.
Symbol Parameter
Conditions
|yfs| forward transfer admittance Tj = 25 °C
Ciss(G1) input capacitance at gate1 f = 100 MHz
Ciss(G2) input capacitance at gate2 f = 100 MHz
Coss output capacitance
f = 100 MHz
Crss reverse transfer capacitance f = 100 MHz
Gtr transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
NF noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
Min
28
[1] -
[1] -
[1] -
[1] -
[1]
32
29
27
-
-
-
Typ Max Unit
33 43 mS
1.9 2.4 pF
3.4 -
pF
0.85 -
pF
20 -
fF
36 40 dB
33 37 dB
31 35 dB
4-
dB
0.9 1.5 dB
1.2 1.9 dB
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
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