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IRFP4232PBF の電気的特性と機能

IRFP4232PBFのメーカーはInternational Rectifierです、この部品の機能は「PDP SWITCH」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRFP4232PBF
部品説明 PDP SWITCH
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRFP4232PBF Datasheet, IRFP4232PBF PDF,ピン配置, 機能
www.DataSheet4U.com
PD - 96965A
PDP MOSFET
IRFP4232PbF
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain &
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
250
VDS (Avalanche) typ.
300
RDS(ON) typ. @ 10V
30
EPULSE typ.
IRP max @ TC= 100°C
TJ max
310
117
175
D
G
V
V
m:
µJ
A
°C
S TO-247AC
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
VGS (TRANSIENT)
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
Repetitive Peak Current g
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case f
Notes  through … are on page 8
www.irf.com
Max.
±20
±30
60
42
240
117
430
210
2.9
-40 to + 175
300
10lbxin (1.1Nxm)
Typ.
–––
Max.
0.35
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
04/21/05

1 Page





IRFP4232PBF pdf, ピン配列
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
7.0V
10
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
1
4.0
VDS = 30V
60µs PULSE WIDTH
5.0 6.0 7.0
VGS, Gate-to-Source Voltage (V)
8.0
Fig 3. Typical Transfer Characteristics
1200
1000
800
L = 220nH
C = 0.4µF
100°C
25°C
600
400
200
150 160 170 180 190 200
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
www.irf.com
IRFP4232PbF
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
7.0V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
4.0
ID = 42A
VGS = 10V
3.0
2.0
1.0
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance vs. Temperature
1000
800
600
L = 220nH
C = Variable
100°C
25°C
400
200
0
160 170 180 190 200 210 220 230
ID, Peak Drain Current (A)
Fig 6. Typical EPULSE vs. Peak Drain Current
3


3Pages


IRFP4232PBF 電子部品, 半導体
IRFP4232PbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
di/dt controlled by RG
Driver same type as D.U.T.
VDD +
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
Inductoorr CCuurrernetnt
Forward Drop
Ripple 5%
*VGS=10V
VDD
ISD
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 19a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 19b. Unclamped Inductive Waveforms
L
VCC
DUT
0
1K
Fig 20a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 20b. Gate Charge Waveform
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRFP4232PBF

PDP SWITCH

International Rectifier
International Rectifier


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