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PDF IRFP4227PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4227PBF | |
| Descripción | PDP SWITCH | |
| Fabricantes | International Rectifier | |
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PDP SWITCH
PD - 97070
IRFP4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
200
240
21
130
175
DD
V
V
m:
A
°C
G
S
S
D
G
TO-247AC
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
PD @TC = 25°C
Power Dissipation
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes through are on page 8
www.irf.com
Max.
±30
65
46
260
130
330
190
2.2
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
2/6/06
1 page  
0.16
ID = 46A
0.12
0.08
TJ = 125°C
0.04
0.00
5
TJ = 25°C
6789
VGS, Gate-to-Source Voltage (V)
10
Fig 13. On-Resistance Vs. Gate Voltage
5.0
4.5
4.0
ID = 250µA
3.5
3.0
2.5
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 15. Threshold Voltage vs. Temperature
1
IRFP4227PbF
600
ID
500
TOP 8.6A
14A
BOTTOM 39A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy Vs. Temperature
200
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
120
80
40
0
25
50 75 100 125 150
Case Temperature (°C)
175
Fig 16. Typical Repetitive peak Current vs.
Case temperature
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.08698 0.000074
τ3τ3 0.2112 0.001316
0.1506 0.009395
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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