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PDF IRFBA1405PPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFBA1405PPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE MOSFET
PD -95152
Typical Applications
l Electric Power Steering (EPS)
l Anti-lock Braking System (ABS)
l Wiper Control
l Climate Control
l Power Door
l Lead-Free
IRFBA1405PPbF
HEXFET® Power MOSFET
D
VDSS = 55V
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
Description
G
RDS(on) = 5.0mΩ
ID = 174A
S
Specifically designed for Automotive applications, this Stripe Planar design
of HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional features
of this MOSFET are a 175oC junction operating temperature, fast
switching speed and improved ruggedness in single and repetitive
avalanche. The Super-220 TM is a package that has been designed to
have the same mechanical outline and pinout as the industry standard
TO-220 but can house a considerably larger silicon die. The result is
significantly increased current handling capability over both the TO-220
and the much larger TO-247 package. The combination of extremely low
on-resistance silicon and the Super-220 TM package makes it ideal to
reduce the component count in multiparalled TO-220 applications, reduce
system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has been designed to
meet automotive, Q101, qualification standard.
These benefits make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
Super-220
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
www.irf.com
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
Max.
174
123
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
09/14/04
1 page  
IRFBA1405PPbF
200
LIMITED BY PACKAGE
160
120
80
40
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
0.1
5
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