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IRF7433PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IRF7433PBF |
| |
部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF7433PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
www.DataSheet4U.com
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-12V
PD - 95305
IRF7433PbF
HEXFET® Power MOSFET
RDS(on) max
24mΩ@VGS = -4.5V
30mΩ@VGS = -2.5V
46mΩ@VGS = -1.8V
ID
-8.7A
-7.4A
-6.3A
Description
These P-Channel MOSFETs from International S 1
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
S
2
area. This benefit provides the designer with an S 3
extremely efficient device for use in battery and load
management applications..
G
4
8
A
D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-8.9
-7.1
-36
2.5
1.6
0.02
±8
-55 to +150
SO-8
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
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Max.
50
Units
°C/W
1
10/12/04
1 Page IRF7433PbF
100
VGS
TOP
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
10
-1.8V
-1.5V
BOTTOM -1.2V
1 -1.2V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
10
-1.8V
-1.5V
BOTTOM -1.2V
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25°C
V DS= -10V
1 20µs PULSE WIDTH
1.0 1.5 2.0 2.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 ID = -8.7A
1.5
1.0
0.5
0.0 VGS= -4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
3Pages IRF7433PbF
0.050
0.040
0.030
0.020
ID = -8.7A
0.010
0.0
2.0 4.0 6.0 8.0
-VGS, Gate -to -Source Voltage (V)
10.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.15
0.12
0.09
VGS= -1.8V
0.06
0.03
VGS= -2.5V
0 VGS= -4.5V
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
IRF7433PBF | Power MOSFET ( Transistor ) | International Rectifier |