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IRF7433PBF の電気的特性と機能

IRF7433PBFのメーカーはInternational Rectifierです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF7433PBF
部品説明 Power MOSFET ( Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF7433PBF Datasheet, IRF7433PBF PDF,ピン配置, 機能
www.DataSheet4U.com
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-12V
PD - 95305
IRF7433PbF
HEXFET® Power MOSFET
RDS(on) max
24m@VGS = -4.5V
30m@VGS = -2.5V
46m@VGS = -1.8V
ID
-8.7A
-7.4A
-6.3A
Description
These P-Channel MOSFETs from International S 1
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
S
2
area. This benefit provides the designer with an S 3
extremely efficient device for use in battery and load
management applications..
G
4
8
A
D
7D
6D
5D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-8.9
-7.1
-36
2.5
1.6
0.02
±8
-55 to +150
SO-8
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
www.irf.com
Max.
50
Units
°C/W
1
10/12/04

1 Page





IRF7433PBF pdf, ピン配列
IRF7433PbF
100
VGS
TOP
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
10
-1.8V
-1.5V
BOTTOM -1.2V
1 -1.2V
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
100
VGS
TOP
-10.0V
-7.0V
-4.5V
-3.0V
-2.5V
10
-1.8V
-1.5V
BOTTOM -1.2V
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1 10
-VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
100
TJ = 150° C
10
TJ = 25°C
V DS= -10V
1 20µs PULSE WIDTH
1.0 1.5 2.0 2.5
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0 ID = -8.7A
1.5
1.0
0.5
0.0 VGS= -4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3


3Pages


IRF7433PBF 電子部品, 半導体
IRF7433PbF
0.050
0.040
0.030
0.020
ID = -8.7A
0.010
0.0
2.0 4.0 6.0 8.0
-VGS, Gate -to -Source Voltage (V)
10.0
Fig 12. Typical On-Resistance Vs.
Gate Voltage
0.15
0.12
0.09
VGS= -1.8V
0.06
0.03
VGS= -2.5V
0 VGS= -4.5V
0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0
-ID , Drain Current ( A )
Fig 13. Typical On-Resistance Vs.
Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig 14a. Basic Gate Charge Waveform
6
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF7433PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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