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IRF6622PBFのメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET」です。 |
部品番号 | IRF6622PBF |
| |
部品説明 | DirectFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF6622PBFダウンロード(pdfファイル)リンクがあります。 Total 9 pages
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PD - 97244
IRF6622PbF
IRF6622TRPbF
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
SQ
MP
DirectFET ISOMETRIC
Description
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that
are critical in synchronous buck converter’s ControlFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
15
12
59
120
13
12
Units
V
A
mJ
A
20
ID = 15A
15
10
TJ = 125°C
5
TJ = 25°C
0
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6.0
5.0 VDS= 20V
VDS= 13V
4.0 VDS= 5.0V
3.0
ID= 12A
2.0
1.0
0.0
0
2 4 6 8 10 12
QG Total Gate Charge (nC)
14
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
1
07/18/06
1 Page Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
emJunction-to-Ambient
kmJunction-to-Ambient
lmJunction-to-Ambient
fmJunction-to-Case
Junction-to-PCB Mounted
eÃLinear Derating Factor
IRF6622PbF
Max.
2.2
1.4
34
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.7
–––
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
R1R1
R2R2
R3R3
R4R4
R5R5
Ri (°C/W) τi (sec)
1.620 0.000126
τJ τJ
τ1 τ1
τAτA 2.141 0.001354
τ2 τ2
τ3 τ3
τ4 τ4
τ5 τ5
22.289 0.375850
CiC= iτ=i/τRi/iRi
0.1 SINGLE PULSE
( THERMAL RESPONSE )
20.046 7.41
11.914 99
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
1E-006 1E-005 0.0001
0.001
0.01
0.1
1
10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
3Pages IRF6622PbF
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGGS
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF6622PBF | DirectFET Power MOSFET | International Rectifier |