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IRF6215L の電気的特性と機能

IRF6215LのメーカーはInternational Rectifierです、この部品の機能は「(IRF6215L/S) HEXFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6215L
部品説明 (IRF6215L/S) HEXFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6215L Datasheet, IRF6215L PDF,ピン配置, 機能
www.DataSheet4U.com
l Advanced Process Technology
l Surface Mount (IRF6215S)
l Low-profile through-hole (IRF6215L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V…
Continuous Drain Current, VGS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91643
IRF6215S/L
HEXFET® Power MOSFET
D VDSS = -150V
RDS(on) = 0.29
ID = -13A
S
D 2 Pak
T O -26 2
Max.
-13
-9.0
-44
3.8
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98

1 Page





IRF6215L pdf, ピン配列
100 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
IRF6215S/L
100 VGS
TOP - 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
10
-4.5V
20µs PULSE W IDTH
1
TTcJ = 225°CC
A
1 10 100
-VD S , D rain-to-S ourc e V oltage (V )
Fig 1. Typical Output Characteristics
-4.5V
20µs PULSE W IDTH
1
TTCJ== 117755°°CC
A
1 10 100
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
100
TJ = 25 °C
TJ = 175°C
10
VDS = -50V
20µs PULSE W IDTH
1A
4 5 6 7 8 9 10
-VG S , Ga te -to-S ource V olta ge (V )
Fig 3. Typical Transfer Characteristics
2.5
ID = -11A
2.0
1.5
1.0
0.5
0.0
VG S = -10 V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature


3Pages


IRF6215L 電子部品, 半導体
IRF6215S/L
VDS
L
RG
-20V
tp
D .U .T
IA S
0 .0 1
D R IV E R
VD D
A
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
-10V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
800
ID
TOP -2.7A
-4.7A
BOTTOM -6.6A
600
400
200
0A
25 50 75 100 125 150 175
Starting TJ , Junction Tem perature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit

6 Page



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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IRF6215

HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF6215L

(IRF6215L/S) HEXFET Power MOSFET

International Rectifier
International Rectifier
IRF6215LPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier
IRF6215PBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier


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