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IXGR60N60U1 の電気的特性と機能

IXGR60N60U1のメーカーはIXYS Corporationです、この部品の機能は「LowV-CE(sat) IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGR60N60U1
部品説明 LowV-CE(sat) IGBT
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXGR60N60U1 Datasheet, IXGR60N60U1 PDF,ピン配置, 機能
www.DataSheet4U.com
Low VCE(sat) IGBT
with Diode
IXGR 60N60U1
ISOPLUS247TM
(Electrically Isolated Back Surface)
VCES = 600 V
IC25 = 75 A
VCE(sat) = 1.7 V
Preliminary data
Symbol
Test Conditions
V
CES
VCGR
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
VGES
V
GEM
Continuous
Transient
IC25
IC100
ICM
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 W
(RBSOA) Clamped inductive load; V = 0.8 V
CL CES
PC TC = 25°C
TJ
TJM
Tstg
TL 1.6 mm (0.062 in.) from case for 10 s
VISOL 50/60Hz, RMS, t = 1minute, leads-to tab
Weight
Maximum Ratings
600 V
600 V
±20
±30
75
60
200
ICM = 100
V
V
A
A
A
A
300
-55 ..+ 150
150
-55...+ 150
300
2500
5
W
°C
°C
°C
°C
V
g
Symbol
BV
CES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
I = 1 mA, V = 0 V
C GE
IC = 250 mA, VCE = VGE
V =V
CE CES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC100, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
T
J
=
25°C
TJ = 150°C
600
2.5
V
5.5 V
250 mA
2 mA
±100 nA
1.7 V
ISOPLUS247TM
G
CE
Isolated back surface*
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low collector to tab capacitance
(<25pF)
• Rugged polysilicon gate cell structure
• Fast intrinsic Rectifier
• Low V IGBT and standard diode
CE(sat)
for minimum on-state conduction
losses
• MOS Gate turn-on for drive simplicity
Applications
• Solid state relays
• Capacitor discharge circuits
• High power ignition circuits
Advantages
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98595C (7/00)
1-5

1 Page





IXGR60N60U1 pdf, ピン配列
100
90
80
70
60
50
40
30
20
10
0
0
TJ = 25°C
VGE = 15V
13V
11V
9V
7V
1234
VCE - Volts
5
Figure 1. Saturation Voltage Characteristics
200
175 VGE = 15V
150
125
TJ = 25oC
100
TJ = 125oC
75
50
25
0
01234
VCE - Volts
Figure 3. Saturation Voltage Characteristics
100
10
TJ = 125oC
WRG = 4.7
dV/dt < 5V/ns
1
0.1
0
100 200 300 400 500 600
VCE - Volts
Figure 5. Admittance Curves
© 2000 IXYS All rights reserved
IXGR 60N60U1
350
TJ = 25°C VGE = 15V
300
13V
250 11V
200
150
9V
100
50 7V
0
0 2 4 6 8 10
VCE - Volts
Figure 2. Extended Output Characteristics
1.8
VGE = 15V
1.6
IC = 120A
1.4
1.2
IC = 60A
1.0
IC = 30A
0.8
0.6
25 50 75 100 125 150
TJ - Degrees C
Figure 4. Temperature Dependence of VCE(sat)
1.3
1.2
VGE(th)
IC = 250µA
1.1
BVCES
IC = 250µA
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Figure 6. Capacitance Curves
3-5


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部品番号部品説明メーカ
IXGR60N60U1

LowV-CE(sat) IGBT

IXYS Corporation
IXYS Corporation


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