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PDF IXGR50N60BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGR50N60BD1 | |
| Descripción | HiPerFAST IGBT ISOPLUS247 | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBT
ISOPLUS247TM
IXGR 50N60B
IXGR 50N60BD1
(Electrically Isolated Back Surface)
VICC25ES
VCE(sat)
tfi(typ)
=
=
=
=
600 V
75 A
2.5 V
85 ns
Symbol
Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 100 µH
PC TC = 25°C
TJ
TJM
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
Weight
50/60 Hz, RMS, t = 1minute leads-to-tab
(D1)
Maximum Ratings
600 V
600 V
±20 V
±30 V
75 A
45 A
200 A
ICM = 100
@ 0.8 VCES
250
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
5
V
g
Symbol
Test Conditions
VGE(th)
ICES
IC = 250 µA, VCE = VGE
IC = 500 µA
VCE = 600V
VGE = 0 V
IGES
VCE(sat)
VCE = 0 V, VGE = ±20 V
IC = IT, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
50N60B
2.5
50N60BD1 2.5
5.0 V
5.0 V
50N60B
50N60BD1
50N60B TJ = 125°C
50N60BD1
200 µA
650 µA
1 mA
5 mA
±100 nA
2.5 V
ISOPLUS 247
E153432
G
CE
Isolated Backside*
G = Gate,
E = Emitter
C = Collector
* Patent pending
Features
z DCB Isolated mounting tab
z Meets TO-247AD package Outline
z High current handling capability
z Latest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
Applications
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z Easy assembly
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS98730C(06/04)
1 page  
IXGR 50N60B
IXGR 50N60BD1
160 4000
80
A
140
nC TVVRJ==130000°VC
TVJ= 100°C
A VR = 300V
IF 120
100
80
60
TVJ= 25°C
TVJ=100°C
TVJ=150°C
3000
Qr
2000
IF=120A
IF= 60A
IF= 30A
60
IRM
40
IIIFFF===1632000AAA
40 1000
20
20
0
0 1 2V
VF
Fig. 12 Forward current IF versus VF
0
100 A/µs 1000
-diF/dt
Fig. 13 Reverse recovery charge Qr
versus -diF/dt
0
0
Fig. 14
200 400 600 A8/0µ0s 1000
-diF/dt
Peak reverse current IRM
versus -diF/dt
2.0
1.5
Kf
1.0
IRM
0.5
Qr
0.0
0
40 80 120 °C 160
TVJ
Fig. 15 Dynamic parameters Qr, IRM
versus TVJ
140
ns
130
trr
120
110
TVJ=100°C
VR = 300V
IF=120A
IF= 60A
IF= 30A
20
V
VFR
15
tfr
10
1.6
µs
tfr
1.2
VFR
0.8
100
90
80
0
Fig. 16
200 400 600 A8/0µ0s 1000
-diF/dt
Recovery time trr versus -diF/dt
5 0.4
TVJ= 100°C
0 IF = 60A
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 17 Peak forward voltage VFR and
tfr versus diF/dt
1
K/W
0.1
ZthJC
0.01
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.3073
0.0055
2
0.3533
0.0092
3
0.0887
0.0007
4
0.1008
0.0399
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 18 Transient thermal resistance junction to case
© 2004 IXYS All rights reserved
0.1
DSEP 2x61-06A
s1
t
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| PDF Descargar | [ Datasheet IXGR50N60BD1.PDF ] | |
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