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PDF IXGR32N60CD1 Data sheet ( Hoja de datos )
| Número de pieza | IXGR32N60CD1 | |
| Descripción | HiPerFAST IGBT | |
| Fabricantes | IXYS Corporation | |
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HiPerFASTTM IGBT
with Diode
ISOPLUS247TM
IXGR 32N60CD1
(Electrically Isolated Backside)
VCES
IC25
VCE(SAT)
tfi(typ)
= 600 V
= 45 A
= 2.7 V
= 55 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load, L = 100 µH
PC TC = 25°C
TJ
TJM
Tstg
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
600
600
±20
±30
45
28
120
ICM = 64
@ 0.8 VCES
140
-55 ... +150
150
-55 ... +150
300
VISOL
50/60 Hz, RMS t = 1 min leads-to housing
2500
Weight
5
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
V~
g
Symbol
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VCE = VGE
VCE = 600V
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IT, VGE = 15 V
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
2.5 5.0 V
200 µA
3 mA
±100 nA
2.3 2.7 V
ISOPLUS 247TM (IXGR)
E 153432
G
C E Isolated backside*
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
* Patent pending
Features
z DCB Isolated mounting tab
z Meets TO-247AD package Outline
z High current handling capability
z Latest generation HDMOSTM process
z MOS Gate turn-on
- drive simplicity
Applications
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z AC motor speed control
z DC servo and robot drives
z DC choppers
Advantages
z Easy assembly
z High power density
z Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS98631D(06/04)
1 page  
IXGR 32N60CD1
60
A
50
IF 40
TVJ=150°C
30
TVJ=100°C
20
10
TVJ=25°C
1000
nC
TVVRJ==130000°VC
800
Qr
600
IF= 60A
IF= 30A
IF= 15A
400
200
30
A
25
IRM
20
TVJ= 100°C
VR = 300V
IIFF==
60A
30A
IF= 15A
15
10
5
0
0 1 2 3V
VF
Fig. 12. Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100 A/µs 1000
-diF/dt
Fig. 13. Reverse recovery charge Qr
versus -diF/dt
90
ns
trr
80
70
TVJ=100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 14. Peak reverse current IRM
versus -diF/dt
20 TVJ= 100°C
V IF = 30A
VFR
15
tfr
VFR
1.00
µs
tfr
0.75
10 0.50
5 0.25
0.0
0
40 80 120 °C 160
TVJ
Fig. 15. Dynamic parameters Qr, IRM
versus TVJ
10
K/W
1
ZthJC
0.1
0.01
60
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 16. Recovery time trr versus -diF/dt
0 0.00
0 200 400 600 A80/µ0s 1000
diF/dt
Fig. 17. Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.436
2 0.482
3 0.117
4 0.115
0.0055
0.0092
0.0007
0.0418
0.001
0.0001
0.00001
0.0001
0.001
0.01
Fig. 18. Transient thermal resistance junction to case
0.1
DSEP 2x31-06B
s1
t
© 2004 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXGR32N60CD1.PDF ] | |
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