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MCZ33395T の電気的特性と機能

MCZ33395TのメーカーはFreescale Semiconductorです、この部品の機能は「Three-Phase Gate Driver IC」です。


製品の詳細 ( Datasheet PDF )

部品番号 MCZ33395T
部品説明 Three-Phase Gate Driver IC
メーカ Freescale Semiconductor
ロゴ Freescale Semiconductor ロゴ 




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MCZ33395T Datasheet, MCZ33395T PDF,ピン配置, 機能
www.DFaretaeSshceeatl4eUS.ceommiconductor
Technical Data
Three-Phase Gate Driver IC
The 33395 simplifies the design of high-power BLDC motor control
design by combining the gate drive, charge pump, current sense, and
protection circuitry necessary to drive a three-phase bridge
configuration of six N-channel power MOSFETs. Mode logic is
incorporated to route a pulse width modulation (PWM) or a
complementary PWM output signal to either low-side or high-side
MOSFETs of the bridge.
Detection and drive circuitry are also incorporated to control a
reverse battery protection high-side MOSFET switch. PWM
frequencies up to 28 kHz are possible. Built-in protection circuitry
prevents damage to the MOSFET bridge as well as the drive IC and
includes overvoltage shutdown, overtemperature shutdown,
overcurrent shutdown, and undervoltage shutdown.
The device is parametrically specified over ambient temperature
range of -40°C TA 125°C and 5.5 V VIGN 24 V supply.
Features
• Drives Six N-Channel Low RDS(ON) Power MOSFETs
• Built-In Charge Pump Circuitry
• Built-In Current Sense Comparator and Output Drive Current
Limiting
• Built-In PWM Mode Control Logic
• Built-In Circuit Protection
• Designed for Fractional to Integral HP BLDC Motors
• 32-Pin SOIC Wide Body Surface Mount Package
• 33395 Incorporates a <5.0 µs Shoot-Through Suppression Timer
• 33395T Incorporates a <1.0 µs Shoot-Through Suppression Timer
• Pb-Free Packaging Designated by Suffix Code EW
Document Number: MC33395
Rev 4.0, 2/2007
33395
33395T
THREE-PHASE
GATE DRIVER IC
DWB SUFFIX
EW SUFFIX (Pb-FREE)
98ARH99137A
32-PIN SOICW
ORDERING INFORMATION
Device
Temperature
Range (TA)
Package
MC33395DWB/R2
32 SOICW
MC33395EW/R2
MCZ33395EW/R2 -40°C to 125°C
MC33395TDWB/R2
32 SOICW
(Pb-Free)
32 SOICW
MC33395TEW/R2
32 SOICW
(Pb-Free)
VPWR
VDD
3
2
MCU
3
33395
VGDH
VIGN
VDD
CP1H
CP1L
CP2H
CP2L
CRES
VIGNP
GDH1
GDH2
GDH3
SRC1
SRC2
SRC3
HSE1–3
MODE0–1 GDL1
PWM
GDL2
LSE1–3
GDL3
-ISENS
AGND
PGND +ISENS
VDD
NH
SS
NH
Figure 1. 33395 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.

1 Page





MCZ33395T pdf, ピン配列
PIN CONNECTIONS
PIN CONNECTIONS
CP2H
CPRES
VIGN
VGDH
VIGNP
SRC1
GDH1
GDL1
SRC2
GDH2
GDL2
SRC3
GDH3
GDL3
PGND
TEST
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 CP2L
31 CP1H
30 CP1L
29 LSE1
28 LSE2
27 LSE3
26 HSE1
25 HSE2
24 HSE3
23 MODE0
22 MODE1
21 PWM
20 VDD
19 AGND
18 +ISENS
17 -ISENS
Figure 3. 33395 Pin Connections
Table 1. 33395 Pin Definitions
A functional description of each pin can be found in the Functional Pin Description section beginning on page 9.
Pin Number Pin Name Pin Function Formal Name
Definition
1 CP2H
Charge Pump Cap High potential pin connection for secondary charge pump capacitor
2
CPRES
Input
Charge Pump
Input from external reservoir capacitor for charge pump
Reserve Cap
3
VIGN
Input
Input Voltage
Input from ignition level supply voltage for power functions
4
VGDH
Output
High-Side Gate
Output full-time gate drive for auxiliary high-side power MOSFET switch
Voltage
5
VIGNP
Input
Input Voltage
Input from protected ignition level supply for power functions
Protected
6
SRC1
Sensor
High-Side Sense Sense for high-side source voltage, phase 1
7
GDH1
Output
Gate Drive High Output for gate high-side, phase 1
8
GDL1
Output
Output for Gate Output for gate drive low-side, phase 1
9
SRC2
Sensor
High-Side Sense Sense for high-side source voltage, phase 2
10
GDH2
Output
Gate Drive High Output for gate high-side, phase 2
11
GDL2
Output
Output for Gate Output for gate drive low-side, phase 2
12
SRC3
Sensor
High-Side Sense Sense for high-side source voltage, phase 3
13
GDH3
Output
Gate Drive High Output for gate drive high-side, phase 3
14
GDL3
Output
Gate Drive Low Output for gate drive low-side, phase 3
15
PGND
Ground
Power Ground
Ground pins for power functions
16 Test N/A
Test Pin
This should be connected to ground or left open
17
-ISENS
Input
IS Minus
Inverting input for current limit comparator
18
+ISENS
Input
IS Plus
Non-inverting input for current limit comparator
19
AGND
Ground
Analog Ground
Ground pin for logic functions
20
VDD
Power Logic Supply Voltage Supply voltage for logic functions
21
PWM
Input Pulse Width Modulator Input for pulse width modulated driver duty cycle
Analog Integrated Circuit Device Data
Freescale Semiconductor
33395
3


3Pages


MCZ33395T 電子部品, 半導体
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions -40°C TA 125°C, 5.5 V VIGNP 24 V unless otherwise noted. Typical values reflect
approximate parameter mean at TA = 25°C under normal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ Max Unit
POWER INPUT
VIGN Current @ 5.5 V–24 V, VDD = 5.5 V
VIGNP Current @ 5.5 V–24 V, VDD = 5.5 V
VIGNP Overvoltage Shutdown
VIGNP Voltage
VDD Current @ 5.5 VDC, 5.5 V VIGNP 24 V
VDD Low-Voltage Reset Level
VDD One-Time Fuse (Logic Supply)
IIGN
IIGNP
VIGNPSD
VIGNP
IVDD
VDD(RESET)
25
5.5
2.5
7.0
0.2 1.0 mA
– 100 mA
33 36.5 V
– 24 V
1.8 4.0 mA
3.2 4.0 V
– –V
INPUT / OUTPUT
Input Current at VDD = 5.5 V
LSEn, HSEn, PWM, and MODEn = 3.0 V
IIN µA
5.0 12 25
Input Threshold at VDD = 5.5 V
LSEn, HSEn, PWM, and MODEn (4)
VTH V
1.0 2.0 3.0
VSCRn Source Sense Voltage
SRC1, SRC2, SRC3
Comparator Input Offset Voltage
Comparator Input Bias Current
Comparator Input Offset Current
Common Mode Voltage (5)
Comparator Differential Input Voltage (5)
Charge Pump Voltage VIGN (6)
VIGNP = 5.5 V, ICRES = 1.0 mA
VIGNP = 9.0 V, ICRES = 1.0 mA
VIGNP = 12 V, ICRES = 5.0 mA
VIGNP = 24 V, ICRES = 1.0 mA
VIGNP = 24 V, ICRES = 5.0 mA
VSCRn
VINP(OFFSET)
VINP(BIAS)
IINP(OFFSET)
VCMR
VINPdiff
VCRES - VIGNP
-0.3
5.0
-500
-300
0
-VDD
4.0
4.0
4.5
8.0
4.5
VIGNP
14
-170
-3.0
6.0
7.5
10
16
12
24
20
500
300
VDD - 2.0
+VDD
18
18
18
18
18
V
mV
nA
nA
VDC
V
V
VGDH Output Voltage with GDHn in ON State
VGDHn(on) - V SRCn
V
VIGNP = 5.5 V, IGDHn = 1.0 mA
4.0 5.2 18
VIGNP = 12 V, IGDHn = 5.0 mA
4.0 9.0 18
VIGNP = 24 V, IGDHn = 5.0 mA
4.5 11 18
VGDH Output Voltage with GDHn in OFF State
VIGNP = SRCn = 14 V, IGDHn = 1.0 mA
VGDHn(off)
V
-1.0 0.6 1.0
Notes
4. Logic inputs LSEn, HSEn, PWM, and MODEn have internal 20 µA internal sinks.
5. Guaranteed by design and characterization. Not production tested.
6. The Charge Pump has a positive temperature coefficient. Therefore the Min’s occur at -40°C, Typ’s at 25°C, and Max’s at 125°C.
33395
6
Analog Integrated Circuit Device Data
Freescale Semiconductor

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部品番号部品説明メーカ
MCZ33395

Three-Phase Gate Driver IC

Freescale Semiconductor
Freescale Semiconductor
MCZ33395T

Three-Phase Gate Driver IC

Freescale Semiconductor
Freescale Semiconductor


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