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IRKN26 の電気的特性と機能

IRKN26のメーカーはInternational Rectifierです、この部品の機能は「ADD-A-pak-TM GEN V Power Modules」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRKN26
部品説明 ADD-A-pak-TM GEN V Power Modules
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRKN26 Datasheet, IRKN26 PDF,ピン配置, 機能
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Bulletin I27130 rev. G 10/02
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
IRK.26 SERIES
ADD-A-pakTM GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
27 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
Major Ratings and Characteristics
Parameters
IT(AV) or IF(AV)
@ 85°C
IRK.26
27
Units
A
IO(RMS) (*)
ITSM @ 50Hz
IFSM @ 60Hz
I2t @ 50Hz
@ 60Hz
I2t
60
400
420
800
730
8000
A
A
A
A2s
A2s
A2s
VRRM range
TSTG
TJ
(*) As AC switch.
400 to 1600
- 40 to 125
- 40 to125
V
oC
oC
www.irf.com
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regu-
lated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
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IRKN26 pdf, ピン配列
Triggering
Parameters
PGM Max. peak gate power
PG(AV) Max. average gate power
IGM
-VGM
Max. peak gate current
Max. peak negative
gate voltage
VGT Max. gate voltage
required to trigger
IGT Max. gate current
required to trigger
VGD Max. gate voltage
that will not trigger
IGD Max. gate current
that will not trigger
Blocking
Parameters
IRRM
IDRM
VINS
Max. peak reverse and
off-state leakage current
at VRRM, VDRM
RMS isolation voltage
dv/dt Max. critical rate of rise
IRK. 26
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
IRK. 26
15
2500 (1 min)
3500 (1 sec)
500
IRK.26 Series
Bulletin I27130 rev. G 10/02
Units Conditions
W
A
V
TJ = - 40°C
Anode supply = 6V
TJ = 25°C
TJ = 125°C
resistive load
TJ = - 40°C
Anode supply = 6V
mA TJ = 25°C resistive load
TJ = 125°C
V
TJ = 125oC,
rated VDRM applied
mA
TJ = 125oC,
rated VDRM applied
Units Conditions
mA
V
V/µs
TJ = 125oC, gate open circuit
50 Hz, circuit to base, all terminals
shorted
TJ = 125oC, linear to 0.67 VDRM,
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.
Thermal and Mechanical Specifications
Parameters
TJ Junction operating
temperature range
Tstg
RthJC
Storage temp. range
Max. internal thermal
resistance, junction
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar
wt Approximate weight
Case style
IRK.26
- 40 to 125
- 40 to 125
0.31
0.1
5
3
110 (4)
TO-240AA
Units Conditions
°C
K/W
Per module, DC operation
Mounting surface flat, smooth and greased
Nm
gr (oz)
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
JEDEC
R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.26
180o
0.23
Sine half wave conduction
120o
0.27
90o
0.34
60o
0.48
30o
0.73
180o
0.17
Rect. wave conduction
120o
0.28
90o
0.36
60o
0.49
30o
0.73
Units
°C/W
www.irf.com
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IRKN26 電子部品, 半導体
IRK.26 Series
Bulletin I27130 rev. G 10/02
100
90
180°
120°
80 90°
60°
70 30°
60
50
1.5 K/W
2 K/W
40
Conduction Angle
30
20
10
IRK.26.. Series
Per Module
T J = 125°C
3 K/W
4 K/W
8 K/W
0
0 10 20 30 40 50 600 20 40 60 80 100 120 140
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-state Power Loss Characteristics
250
200
150
100
50
0
0
180°
(Sine)
180°
(Rect)
2 x IRK.26.. Series
Single Phase Bridge
Connected
T J = 125°C
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
3 K/W
8 K/W
10 20 30 40 50
Total Output Current (A)
600 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
350
300
250
200
150
100
50
0
0
120°
(Rect)
3 x IRK.26.. Series
Three Phase Bridge
Connected
TJ = 125°C
0.3 K/W
0.4 K/W
0.5 K/W
0.7 K/W
1 K/W
1.5 K/W
3 K/W
10 20 30 40 50 60 70 800 20 40 60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
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共有リンク

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部品番号部品説明メーカ
IRKN26

ADD-A-pak-TM GEN V Power Modules

International Rectifier
International Rectifier
IRKN27

ADD-A-pak-TM GEN V Power Modules

International Rectifier
International Rectifier


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