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NESG2031M05のメーカーはCELです、この部品の機能は「NPN SiGe HIGH FREQUENCY TRANSISTOR」です。 |
部品番号 | NESG2031M05 |
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部品説明 | NPN SiGe HIGH FREQUENCY TRANSISTOR | ||
メーカ | CEL | ||
ロゴ | |||
このページの下部にプレビューとNESG2031M05ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG2031M05
FEATURES
• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
VCEO = 5 V (Absolute Maximum)
• LOW NOISE FIGURE:
NF = 0.8 dBm at 2 GHz
NF = 1.3 dBm at 5.2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 21.5 dB at 2 GHz
• LOW PROFILE M05 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
M05
DESCRIPTION
NEC's NESG2031M05 is fabricated using NEC s high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
NEC slow profile, flat lead style M05 Package provides high
frequency performance for compact wireless designs.
NESG2031M05
M05
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
NF
Ga
NF
Ga
MSG
|S21E|2
P1dB
OIP3
fT
Cre
ICBO
IEBO
hFE
Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = ZSOPT, ZL = ZLOPT
Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz
Output Power at 1dB Compression Point at
VCE = 3 V, IC = 20 mA, f = 2 GHz
Output 3rd Order Intercept Point at VCE = 3 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product at VCE = 3 V, IC = 20 mA, f = 2 GHz
Reverse Transfer Capacitance2 at VCB = 2 V, IC = 0 mA, f = 1 GHz
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain3 at VCE = 2 V, IC = 5 mA
dB
dB
dB
dB
dB
dB
dBm
dBm
GHz
pF
nA
nA
15.0
19.0
16.0
20
130
1.3
10.0
0.8 1.1
17.0
21.5
18.0
13
23
25
0.15 0.25
100
100
190 260
Notes:
1. MSG = S21
S12
2. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
3. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
California Eastern Laboratories
1 Page TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 3 V
10
1
0.1
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage, VBE (V)
1.0
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
100
NESG2031M05
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
200 µA
180 µA
30
160 µA
25 140 µA
120 µA
20
100 µA
15 80 µA
60 µA
10
40 µA
5
IB = 20 µA
0 123 4 56
Collector to Emitter Voltage, VCE (V)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
100
10
0.1
1
10 100
Collector Current, lC (mA)
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1
10 100
Collector Current, lC (mA)
10
0.1
1
10 100
Collector Current, lC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
35
VCE = 1 V
f = 2 GHz
30
25
20
15
10
5
0
1 10 100
Collector Current, lC (mA)
3Pages NESG2031M05
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
VCE = 2 V
f = 5 GHz
25
20
15 MAG
10
|S21e|2
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 2 GHz
25
MSG
MAG
20
15 |S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 5 GHz
25
20
15 MAG
10
|S21e|2
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 1 GHz
MSG
25
20 |S21e|2
15
10
5
0
1 10 100
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
30
VCE = 3 V
f = 3 GHz
25
MSG
MAG
20
15
|S21e|2
10
5
0
1 10 100
Collector Current, IC (mA)
OUTPUT POWER, COLLECTOR CUR-
RENT vs. INPUT POWER
20
VCE = 3 V, f = 1 GHz
Icq = 20 mA (RF OFF)
15
50
40
Pout
10 30
IC
5 20
0 10
-5
-30 -25 -20 -15 -10
Input Power, Pin (dBm)
0
-5
6 Page | |||
ページ | 合計 : 12 ページ | ||
|
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部品番号 | 部品説明 | メーカ |
NESG2031M05 | NPN SiGe HIGH FREQUENCY TRANSISTOR | CEL |