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What is NESG2030M04?

This electronic component, produced by the manufacturer "NEC", performs the same function as "NONLINEAR MODEL".


NESG2030M04 Datasheet PDF - NEC

Part Number NESG2030M04
Description NONLINEAR MODEL
Manufacturers NEC　
Logo NEC Logo　


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NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04
FEATURES
• SiGe TECHNOLOGY:
fT = 60 GHz Process
• LOW NOISE FIGURE:
NF = 0.9 dBm at 2 GHz
• HIGH MAXIMUM STABLE GAIN:
MSG = 20 dB at 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
DESCRIPTION
The NESG2030M04 is fabricated using NEC's state-of-the-art
SiGe, wafer process. With a typical transition frequency of
60 GHz the NESG2030M04 is usable in applications from 100
MHz to over 10 GHz. Maximum DC current input of 35 mA
provides a device with a usable current range of 250 µA to 25
mA. The NESG2030M04 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NESG2030M04 is
an ideal choice for LNA and oscillator requirements in all
mobile communication systems.
M04
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG2030M04
50 pcs(non reel)
NESG2030M04-T2 3 kpcs/reel
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
ICBO
IEBO
hFE
Cre
NF
Ga
MSG
|S21E|2
P1dB
OIP3
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5V, IE = 0
Emitter Cutoff Current at VEB = 0.5 V, IC = 0
DC Current Gain2 at VCE = 2 V, IC = 5 mA
Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
Output Power at 1 dB compression point
VCE = 2 V, IC = 20 mA, f = 2 GHz
Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz
UNITS
nA
nA
pF
dB
GHz
dB
dB
dBm
dBm
NESG2030M04
2SC5761
M04
MIN TYP MAX
200
200
200 400
0.17 0.22
0.9 1.1
16
18 20
16 18
12
22
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to
the guard pin.
4. MSG = S21
S12
California Eastern Laboratories

line_dark_gray
NESG2030M04 equivalent
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFMIN
GA
(GHz)
(dB) (dB)
VCE = 2 V, IC = 5 mA
0.8 0.77 22.62
0.9 0.77 21.79
1.0 0.78 21.03
1.1 0.78 20.33
1.2 0.79 19.69
1.3 0.79 19.10
1.4 0.80 18.56
1.5 0.81 18.05
1.7 0.82 17.13
1.9 0.84 16.31
2.0 0.85 15.94
2.2 0.87 15.26
2.4 0.89 14.64
2.5 0.91 14.36
2.7 0.93 13.83
3.0 0.98 13.12
3.5 1.06 12.12
4.0 1.15 11.31
4.5 1.26 10.63
VCE = 2 V, IC = 10 mA
0.8 0.95 24.28
0.9 0.95 23.43
1.0 0.95 22.65
1.1 0.95 21.93
1.2 0.95 21.27
1.3 0.95 20.65
1.4 0.96 20.08
1.5 0.96 19.54
1.7 0.96 18.56
1.9 0.97 17.70
2.0 0.98 17.30
2.2 0.99 16.56
2.4 1.00 15.89
2.5 1.01 15.58
2.7 1.03 15.00
3.0 1.06 14.23
3.5 1.12 13.13
4.0 1.19 12.23
4.5 1.27 11.48
VCE = 2 V, IC = 20 mA
0.8 1.26 25.33
0.9 1.25 24.45
1.0 1.25 23.65
1.1 1.25 22.91
1.2 1.25 22.23
1.3 1.25 21.60
1.4 1.25 21.01
1.5 1.25 20.46
1.7 1.25 19.46
1.9 1.26 18.57
ΓOPT
MAG ANG
0.440
0.433
0.426
0.418
0.410
0.402
0.394
0.386
0.372
0.359
0.354
0.345
0.340
0.338
0.338
0.342
0.354
0.354
0.325
22.0
25.3
28.6
32.0
35.5
39.0
42.6
46.3
54.0
62.1
66.3
74.9
83.6
87.9
96.4
108.6
126.4
141.4
155.7
0.264
0.261
0.257
0.253
0.249
0.244
0.239
0.234
0.226
0.219
0.216
0.213
0.213
0.214
0.219
0.229
0.249
0.258
0.243
18.6
21.8
25.1
28.5
32.0
35.6
39.3
43.2
51.5
60.4
65.0
74.6
84.2
88.9
98.1
108.6
110.7
142.4
156.3
0.082
0.081
0.079
0.076
0.074
0.071
0.068
0.065
0.061
0.062
14.2
17.4
20.9
24.9
29.4
34.5
40.4
47.1
63.0
81.1
Rn/50
0.21
0.21
0.20
0.20
0.19
0.19
0.18
0.18
0.17
0.16
0.16
0.15
0.14
0.14
0.13
0.12
0.11
0.09
0.08
0.18
0.18
0.18
0.17
0.17
0.17
0.17
0.16
0.16
0.15
0.15
0.14
0.14
0.13
0.13
0.12
0.11
0.10
0.10
0.17
0.17
0.17
0.17
0.17
0.16
0.16
0.16
0.15
0.15
NESG2030M04
TYPICAL NOISE PARAMETERS (CONT')
FREQ.
NFMIN
GA
(GHz)
(dB) (dB)
VCE = 2 V, IC = 20 mA
2.0 1.26 18.16
2.2 1.27 17.40
2.4 1.28 16.71
2.5 1.28 16.39
2.7 1.30 15.79
3.0 1.32 14.97
3.5 1.36 13.81
4.0 1.42 12.84
4.5 1.48 12.02
ΓOPT
MAG ANG
0.064
0.072
0.083
0.090
0.105
0.128
0.159
0.175
0.169
90.1
106.5
119.5
124.8
133.5
143.2
154.7
164.5
176.7
Rn/50
0.15
0.15
0.14
0.14
0.14
0.13
0.13
0.12
0.12
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M04
FLAT LEAD 4-PIN THIN TYPE SUPER MINIMOLD
0.40-+00.0.16
2
0.60
2.0 –0.1 1.25
0.65
1
0.30-+00.0.15
(Leads 1, 3, 4)
2.05–0.1
1.25–0.1
3
4
0.65
1.30
0.65
0.59–0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
0.11-+0.00.51


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Featured Datasheets

Part NumberDescriptionMFRS
NESG2030M04The function is NONLINEAR MODEL. NECNEC
NESG2030M04The function is SiGe HIGH FREQUENCY TRANSISTOR. CELCEL

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