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PDF MAPRST2729-170M Data sheet ( Hoja de datos )
| Número de pieza | MAPRST2729-170M | |
| Descripción | RADAR PULSED POWER TRANSISTOR | |
| Fabricantes | Tyco Electronics | |
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Preliminary Specification,
Rev 03/30/2005
MAPRST2729-170M
RADAR PULSED POWER TRANSISTOR
170 Wpk, 2700 - 2900 MHz, 100μs Pulse Width, 10% Duty Cycle
FEATURES
• Designed for ATC Radar Applications
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metallization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol Rating
Collector-Emitter Voltage
VCES
65
Emitter-Base Voltage
VEBO
3.0
Collector Current (Peak) IC 27
Power Dissipation @ +25°C
PD
TBD
Storage Temperature
TSTG
-65 to +200
Junction Temperature
TJ 200
Units
V
V
A
W
°C
°C
OUTLINE DRAWING
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown
Voltage
Collector-Emitter Leakage
Current
Thermal Resistance
BVCES
ICES
RTH
65
-
-
Power Output
Pout 170
Power Gain
Collector Efficiency
GP 8.5
ηC 40
Input Return Loss
RL 10
Load Mismatch Stability
VSWR-S
-
Load Mismatch Tolerance
VSWR-T
-
Max
-
15
.25 (TBD)
-
-
-
-
1.5:1
2:1
Units
V
mA
°C/W
Wpk
dB
%
dB
-
-
IC=50mA
Test Conditions
VCE=36V
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
VCC=36 V, Pin=24 W, F=2.7, 2.8 and 2.9 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (MHz)
Z IF (Ω)
Z OF (Ω)
2700
(TBD)
(TBD)
2800
(TBD)
(TBD)
2900
(TBD)
(TBD)
M/A-COM, RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE.
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