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PDF HAT3021R Data sheet ( Hoja de datos )
| Número de pieza | HAT3021R | |
| Descripción | Silicon N/P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
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HAT3021R
Silicon N/P Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
Outline
SOP-8
78
DD
24
GG
S1
Nch
56
DD
S3
Pch
8 7 65
1 234
REJ03G0415-0200
Rev.2.00
Oct.06.2004
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Nch Pch
Drain to source voltage
VDSS
80 –80
Gate to source voltage
VGSS
±20 ±20
Drain current
Drain peak current
ID
ID(pulse)Note1
3.4
20.4
–2.6
–15.6
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
3.4
1.5
–2.6
1.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00, Oct.06.2004, page 1 of 10
1 page  
HAT3021R
Static Drain to Source on State Resistance
vs. Temperature
250
Pulse Test
200 ID = 0.5 A, 1 A, 2 A
150
VGS = 4.5 V
100
0.5 A, 1 A, 2 A
50 10 V
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
10
13
10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 3.4 A
20
80
60 VDS
40
VDD = 50 V
25 V
10 V
VGS 16
12
8
20
VDD = 50 V
4
25 V
10 V
0
0 2 4 6 8 10
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
10 Tc = –25°C
3
1
0.3 25°C
0.1
75°C
0.03
0.01
0.01
VDS = 10 V
Pulse Test
0.03 0.1 0.3 1 3 10
Drain Current ID (A)
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
100
50 Coss
20
10
5
2
VGS = 0
f = 1 MHz
Crss
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
50 td(off)
20 tf
10
5
tr
td(on)
2 VGS = 10 V, VDD = 30 V
Rg = 4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2
Drain Current ID
5
(A)
10
Rev.2.00, Oct.06.2004, page 5 of 10
5 Page 
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
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