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IRLR8113PBFのメーカーはInternational Rectifierです、この部品の機能は「HEXFET Power MOSFET」です。 |
部品番号 | IRLR8113PBF |
| |
部品説明 | HEXFET Power MOSFET | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRLR8113PBFダウンロード(pdfファイル)リンクがあります。 Total 11 pages
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
gÃRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes through
are on page 11
www.irf.com
PD - 95779A
IRLR8113PbF
IRLU8113PbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 6.0m
22nC
D-Pak
IRLR8113
I-Pak
IRLU8113
Max.
30
± 20
94f
67f
380
89
44
0.59
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
–––
–––
Max.
1.69
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/7/04
1 Page IRLR/U8113PbF
1000
100
10
2.5V
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
2.5V
10
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10 TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
1
2345678
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0
ID = 30A
VGS = 10V
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
vs. Temperature
3
3Pages IRLR/U8113PbF
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
- VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
6
700
ID
600 TOP 8.3A
9.4A
500 BOTTOM 13A
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
LD
VDD
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
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6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ IRLR8113PBF データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
IRLR8113PBF | HEXFET Power MOSFET | International Rectifier |