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IRLR8103V PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRLR8103V
部品説明 N-Channel Application-Specific MOSFETs
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRLR8103V Datasheet, IRLR8103V PDF,ピン配置, 機能
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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
100% R Tested
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q & R for reduced losses in both control and
sw DS(on)
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
PD-94021C
IRLR8103V
D
D-Pak
G
S
DEVICE CHARACTERISTICS…
RDS(on)
QG
QSW
QOSS
IRLR8103V
7.9 m
27 nC
12 nC
29nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
TC = 25°C
(VGS > 10V)
™Pulsed Drain Current
TC= 90°C
Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃÃÃTC = 25°C
TC = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
™Pulsed Source Current
Symbol
VDS
VGS
ID
IDM
PD
TJ , TSTG
IS
ISM
Thermal Resistance
Parameter
ehMaximum Junction-to-Ambient
hMaximum Junction-to-Case
www.irf.com
Symbol
RθJA
RθJC
IRLR8103V
30
±20
91
63
363
115
60
-55 to 150
91
363
Units
V
A
W
°C
A
Typ.
–––
–––
Max.
50
1.09
Units
°C/W
1
10/22/04

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