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PDF STT1NF100 Data sheet ( Hoja de datos )
| Número de pieza | STT1NF100 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STT1NF100
N-CHANNEL 100V - 0.7Ω - 1A SOT23-6L
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
STT1NF100
100V
<0.8Ω
s TYPICAL RDS(on) = 0.7Ω
s EXCEPTIONAL dv/dt CAPABILITY
s VERY LOW Qg
ID
1A
SOT23-6L
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
INTERNAL SCHEMATIC DIAGRAM
www.DataSheet4U.com
APPLICATIONS
s DC-DC & DC-AC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVES, etc.)
s SYNCHRONOUS RECTIFICATION
MARKING
s STQ0
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
September 2002
Value
100
100
± 20
1
0.6
4
1.6
0.013
20
Unit
V
V
V
A
A
A
W
W/°C
V/ns
– 55 to 150
°C
(1) ISD ≤1A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/6
1 page  
STT1NF100
DIM.
A
A1
A2
b
C
D
E
E1
L
e
e1
MIN.
0.90
0.00
0.90
0.25
0.09
2.80
2.60
1.50
0.35
TSOP-6 MECHANICAL DATA
mm
TYP.
0.95
1.90
MAX.
1.45
0.15
1.30
0.50
0.20
3.10
3.00
1.75
0.55
MIN.
0.035
0.000
0.035
0.010
0.004
0.110
0.102
0.059
0.014
mils
TYP.
0.037
0.075
MAX.
0.057
0.006
0.051
0.020
0.008
0.122
0.118
0.069
0.022
A A2
A1 b
e
e1
D
c
L
E
E1
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STT1NF100.PDF ] | |
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