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PDF IRLI630G Data sheet ( Hoja de datos )
| Número de pieza | IRLI630G | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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HEXFET® Power MOSFET
PD - 9.1236
IRLI630G
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
RDS(ON) Specified at VGS = 4V & 5V
Fast Switching
Ease of paralleling
VDSS = 200V
RDS(on) = 0.40Ω
ID = 6.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 5.0V
Continuous Drain Current, VGS @ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
6.2
3.9
25
35
0.28
±10
125
6.2
3.5
5.0
-55 to + 150
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
Typ.
––––
––––
Max.
3.6
65
Units
°C/W
To Order
Revision 0
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7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC, Case Temperature (°C)
A
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
5.0 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRLI630G
RD
D.U.T.
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1 D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
PD M
Notes:
1. Duty factor D = t1 / t2
t1
t2
2 . P e a k TJ = PD M x Z th J C + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10AA
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
To Order
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLI630G.PDF ] | |
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