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PDF IRF7329 Data sheet ( Hoja de datos )
| Número de pieza | IRF7329 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7329 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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l Trench Technology
l Ultra Low On-Resistance
l Dual P-Channel MOSFET
l Low Profile (<1.8mm)
l Available in Tape & Reel
VDSS
-12V
PD- 94095A
IRF7329
HEXFET® Power MOSFET
RDS(on) max (mW)
17@VGS = -4.5V
21@VGS = -2.5V
30@VGS = -1.8V
ID
±9.2A
±7.4A
±4.6A
Description
New P-Channel HEXFETÒ power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
S1
G1
S2
G2
18
27
36
45
Top View
D1
D1
D2
D2
SO-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RqJL
RqJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
www.irf.com
Max.
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Typ.
Max.
20
62.5
Units
°C/W
1
01/29/04
1 page  
IRF7329
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7329.PDF ] | |
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