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PDF IRF7321D2 Data sheet ( Hoja de datos )
| Número de pieza | IRF7321D2 | |
| Descripción | FETKY MOSFET & Schottky Diode | |
| Fabricantes | International Rectifier | |
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PD- 91667D
IRF7321D2
FETKY TM MOSFET & Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l Generation 5 Technology
l SO-8 Footprint
A
A
S
G
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results in
an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
18
27
36
45
Top View
K VDSS = -30V
K
D RDS(on) = 0.062Ω
D
Schottky Vf = 0.52V
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current À
Power Dissipation
Linear Derating Factor
-4.7
-3.8
-38
2.0
1.3
16
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Á
± 20
-5.0
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient Ã
Maximum
62.5
Units
A
W
mW/°C
V
V/ns
°C
Units
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
1
www.irf.com
10/15/04
1 page  
100
0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.00001
Power Mosfet Characteristics
IRF7321D2
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.6
0.5
0.4
0.3
VGS = -4.5V
0.2
0.1
0.0
0
VGS = -10V
10 20
-ID , Drain Current (A)
A
30
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
0.16
0.12
0.08
I D = -4.9A
0.04
0.00
0
3 6 9 12
-VGS , Gate -to-Source Voltage (V)
A
15
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7321D2.PDF ] | |
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