|
|
PDF APTM50DHM65T Data sheet ( Hoja de datos )
| Número de pieza | APTM50DHM65T | |
| Descripción | MOSFET Power Module | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de APTM50DHM65T (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
APTM50DHM65T
Asymmetrical - Bridge
MOSFET Power Module
VDSS = 500V
RDSon = 65mW max @ Tj = 25°C
ID = 51A @ Tc = 25°C
VBUS
Q1
CR3
G1
S1
OUT1
OUT2
Q4
CR2
0/VBU S SENSE
NT C1
0/VBU S
VBUS SENSE
G4
S4
NT C2
www.DataSheet4U.com
VBUS
SENSE
VBUS
S1
G1
G4
S4
0/VBUS
0/VBUS
SENSE
OUT2
OUT1
NTC2
NTC1
Application
· Welding converters
· Switched Mode Power Supplies
· Switched Reluctance Motor Drives
Features
· Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
· Kelvin source for easy drive
· Very low stray inductance
- Symmetrical design
- Lead frames for power connections
· Internal thermistor for temperature monitoring
· High level of integration
Benefits
· Outstanding performance at high frequency operation
· Direct mounting to heatsink (isolated package)
· Low junction to case thermal resistance
· Solderable terminals both for power and signal for
easy PCB mounting
· Low profile
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
51
38
204
±30
65
390
51
50
3000
Unit
V
A
V
mW
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
1 page  
Breakdown Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
10000
1000
Ciss
Coss
100 Crss
10
0 10 20 30 40
VDS, Drain to Source Voltage (V)
50
APTM50DHM65T
ON resistance vs Temperature
2.5
VGS=10V
2.0 ID= 25.5A
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 us
10 1 ms
10 ms
1
0.1
1
Single pulse
TJ=150°C
100 ms
10 100 1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
ID=51A
12 TJ=25°C
10
VDS=100V
VDS=250V
8 VDS=400V
6
4
2
0
0 25 50 75 100 125 150 175
Gate Charge (nC)
APT website – http://www.advancedpower.com
5–6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTM50DHM65T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| APTM50DHM65T | MOSFET Power Module | Advanced Power Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |