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PDF MRF6V2150NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MRF6V2150NBR1 | |
| Descripción | RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain — 25 dB
Drain Efficiency — 68.3%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6V2150N
Rev. 1, 5/2007
MRF6V2150NR1
MRF6V2150NBR1
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2150NR1
www.DataSheet4U.com
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2150NBR1
PARTS ARE SINGLE - ENDED
Table 1. Maximum Ratings
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Rating
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
RFin/VGS
RFout/VDS
RFin/VGS
RFout/VDS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Symbol
VDSS
VGS
Tstg
TJ
Value
- 0.5 +110
- 0.5 + 12
- 65 to +150
200
Unit
Vdc
Vdc
°C
°C
MRF6V2150NR1 MRF6V2150NBR1
1
1 page  
TYPICAL CHARACTERISTICS
1000 100
Ciss
100 Coss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
1
0 10 20 30 40 50
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain - Source Voltage
5
4
VGS = 3 V
3
2.75 V
2 2.63 V
2.5 V
1
2.25 V
0
0 20 40 60 80 100 120
DRAIN VOLTAGE (VOLTS)
Figure 6. DC Drain Current versus Drain Voltage
− 10
− 15
VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz
Two −Tone Measurements, 100 kHz Tone Spacing
− 20
IDQ = 225 mA
− 25
−30 336 mA
−35 450 mA
− 40
563 mA
− 45
685 mA
− 50
− 55
900 mA
− 60
5 10
100 300
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Third Order Intermodulation Distortion
versus Output Power
10
TC = 25°C
1
1
10
100 200
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
27
26 IDQ = 675 mA
563 mA
25
450 mA
24
337 mA
23
22 225 mA
VDD = 50 Vdc
f = 220 MHz
21
1 10 100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 7. CW Power Gain versus Output Power
58
56 P3dB = 52.61 dBm (182.39 W)
Ideal
54 P1dB = 52.27 dBm (168.66 W)
52 Actual
50
VDD = 50 Vdc, IDQ = 450 mA
f = 220 MHz
48
22 24 26 28 30 32
Pin, INPUT POWER (dBm)
Figure 9. CW Output Power versus Input Power
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
5
5 Page 
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MRF6V2150NBR1.PDF ] | |
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