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IRGSL14C40LPBF の電気的特性と機能

IRGSL14C40LPBFのメーカーはInternational Rectifierです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRGSL14C40LPBF
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRGSL14C40LPBF Datasheet, IRGSL14C40LPBF PDF,ピン配置, 機能
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PD - 95193A
IRGS14C40LPbF
Ignition IGBT IRGSL14C40LPbF
IRGB14C40LPbF
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
• Most Rugged in Industry
• Logic-Level Gate Drive
• > 6KV ESD Gate Protection
• Low Saturation Voltage
• High Self-clamped Inductive Switching Energy
TERMINAL DIAGRAM
Collector
Gate
R1
R2
•BVCES = 370V min, 430V max
•IC @ TC = 110°C = 14A
•VCE(on) typ= 1.2V @7A @25°C
• IL(min)=11.5A @25°C,L=4.7mH
• Lead-Free
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Emitter
JEDEC TO-263AB JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L IRGSL14C40L IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 110°C Continuous Collector Current
IG Continuous Gate Current
IGp Peak Gate Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ T = 110°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
VESD
Electrostatic Voltage
IL Self-clamped Inductive Switching Current
Max Unit
Condition
Clamped V RG = 1K ohm
20 A VGE = 5V
14 A VGE = 5V
1 mA
10 mA tPK = 1ms, f = 100Hz
Clamped V
125 W
54 W
- 40 to 175 °C
- 40 to 175 °C
6 KV C = 100pF, R = 1.5K ohm
11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Min Typ
Max
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
40 °C/W
(PCB Mounted, Steady State)
ZθJC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
www.irf.com
Page 1
11/19/04

1 Page





IRGSL14C40LPBF pdf, ピン配列
IRGS14C40LPbF
Ignition IGBT IRGSL14C40LPbF
IRGB14C40LPbF
Fig.1 - Typ. Output Characteristics
TJ=25°C
60
VGE = 10 V
VGE = 5.0V
50 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
40
Fig.2 - Typ. Output Characteristics
TJ=125°C
60
VGE = 10 V
50 VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
40 VGE = 3.7V
30 30
20 20
10 10
0
0123456
VCE (V)
0
0123456
VCE (V)
Fig.3 - Transfer Characteristics
VCE=20V; tp=20µs
100
90 TJ = 25°C
TJ = 125°C
80
70
60
50
40
30
20
10
0
02
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46
VGE (V)
8
10
Page 3
Fig.4 - Typical VCE vs TJ
VGE=4.5V
1.6
1.5
IC = 10A
1.4
1.3
1.2
1.1 IC = 7A
1.0
-50 0 50 100 150 200
TJ (°C)
11/19/04


3Pages


IRGSL14C40LPBF 電子部品, 半導体
450
400
350
300
250
200
150
100
50
0
-50
-14
IRGS14C40LPbF
Ignition IGBT IRGSL14C40LPbF
IRGB14C40LPbF
Fig.12 - Switching Waveform for Time Measurement
VGE= 5V; RG= 1K; L= 1mH; VCE= 14V; used circuit in Fig.14
t d (o f f )
-10 -6
Vcl (measured)
tr
-2 2
t (µs)
VClamp
VGE
6 10
8
7
6
5
4
3
2
1
0
-1
-2
14
Fig.13 - Self-clamped Inductive Switching Waveform
L=4.7mH; TC=25°C; used circuit in Fig.14
12
10 I CE
8
V clamp
500
400
300
6 200
4 100
20
0
-2.E-05 -1.E-05 0.E+00
1.E-05
2.E-05
time
3.E-05
4.E-05
5.E-05
-100
6.E-05
www.irf.com
Page 6
11/19/04

6 Page



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部品番号部品説明メーカ
IRGSL14C40LPBF

IGBT ( Insulated Gate Bipolar Transistor )

International Rectifier
International Rectifier


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