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IRGB14C40LPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRGB14C40LPBF
部品説明 IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB14C40LPBF Datasheet, IRGB14C40LPBF PDF,ピン配置, 機能
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PD - 95193A
IRGS14C40LPbF
Ignition IGBT IRGSL14C40LPbF
IRGB14C40LPbF
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
• Most Rugged in Industry
• Logic-Level Gate Drive
• > 6KV ESD Gate Protection
• Low Saturation Voltage
• High Self-clamped Inductive Switching Energy
TERMINAL DIAGRAM
Collector
Gate
R1
R2
•BVCES = 370V min, 430V max
•IC @ TC = 110°C = 14A
•VCE(on) typ= 1.2V @7A @25°C
• IL(min)=11.5A @25°C,L=4.7mH
• Lead-Free
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Emitter
JEDEC TO-263AB JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L IRGSL14C40L IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 110°C Continuous Collector Current
IG Continuous Gate Current
IGp Peak Gate Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ T = 110°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
VESD
Electrostatic Voltage
IL Self-clamped Inductive Switching Current
Max Unit
Condition
Clamped V RG = 1K ohm
20 A VGE = 5V
14 A VGE = 5V
1 mA
10 mA tPK = 1ms, f = 100Hz
Clamped V
125 W
54 W
- 40 to 175 °C
- 40 to 175 °C
6 KV C = 100pF, R = 1.5K ohm
11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter
Min Typ
Max
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.2
40 °C/W
(PCB Mounted, Steady State)
ZθJC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
www.irf.com
Page 1
11/19/04

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