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IRGB10B60KDPBF PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRGB10B60KDPBF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRGB10B60KDPBF Datasheet, IRGB10B60KDPBF PDF,ピン配置, 機能
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PD - 94925A
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
C
G
E
n-channel
VCES = 600V
IC = 12A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current „
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
TO-220AB
D2Pak
TO-262
IRGB10B60KD IRGS10B60KD IRGSL10B60KD
Max.
600
22
12
44
44
22
10
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)‚
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
°C/W
g
1
11/24/04

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IRGB10B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR

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